Breakdown and recovery of thin gate oxides

Twan Bearda; Paul W. Mertens; Marc M. Heyns; Hans Wallinga; P.H. Woerlee

doi:10.1143/JJAP.39.L582

Breakdown and recovery of thin gate oxides

Twan Bearda, Paul W. Mertens, Marc M. Heyns, Hans Wallinga, P.H. Woerlee

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Abstract

Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

Original language	English
Pages (from-to)	582-584
Number of pages	3
Journal	Japanese journal of applied physics
Volume	39
Issue number	6B
DOIs	https://doi.org/10.1143/JJAP.39.L582
Publication status	Published - 2000

Keywords

METIS-111625
IR-14476

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10.1143/JJAP.39.L582

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@article{3f6d4c5cb05348298274b45222f9ebce,

title = "Breakdown and recovery of thin gate oxides",

abstract = "Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.",

keywords = "METIS-111625, IR-14476",

author = "Twan Bearda and Mertens, {Paul W.} and Heyns, {Marc M.} and Hans Wallinga and P.H. Woerlee",

year = "2000",

doi = "10.1143/JJAP.39.L582",

language = "English",

volume = "39",

pages = "582--584",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6B",

}

TY - JOUR

T1 - Breakdown and recovery of thin gate oxides

AU - Bearda, Twan

AU - Mertens, Paul W.

AU - Heyns, Marc M.

AU - Wallinga, Hans

AU - Woerlee, P.H.

PY - 2000

Y1 - 2000

N2 - Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

AB - Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.

KW - METIS-111625

KW - IR-14476

U2 - 10.1143/JJAP.39.L582

DO - 10.1143/JJAP.39.L582

M3 - Article

SN - 0021-4922

VL - 39

SP - 582

EP - 584

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 6B

ER -

Breakdown and recovery of thin gate oxides

Abstract

Keywords

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