Breakdown and recovery of thin gate oxides

Twan Bearda, Paul W. Mertens, Marc M. Heyns, Hans Wallinga, P.H. Woerlee

    Research output: Contribution to journalArticleAcademic

    4 Citations (Scopus)

    Abstract

    Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress conditions and parasitic elements prohibit the recovery if they result in a high system impedance. The results suggest the existence of a highly conductive path that can be annihilated during breakdown.
    Original languageEnglish
    Pages (from-to)582-584
    Number of pages3
    JournalJapanese journal of applied physics
    Volume39
    Issue number6B
    DOIs
    Publication statusPublished - 2000

    Keywords

    • METIS-111625
    • IR-14476

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