TY - JOUR
T1 - Brillouin nonlinearity characterizations of a high refractive index silicon oxynitride platform [Invited]
AU - Ye, Kaixuan
AU - Keloth, Akshay
AU - Klaver, Yvan
AU - Baldazzi, Alessio
AU - Piccoli, Gioele
AU - Sanna, Matteo
AU - Pavesi, Lorenzo
AU - Ghulinyan, Mher
AU - Marpaung, David
PY - 2024/9/4
Y1 - 2024/9/4
N2 - Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here, we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of n = 1.65). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity-modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.
AB - Silicon oxynitride (SiON) is a low-loss and versatile material for linear and nonlinear photonics applications. Controlling the oxygen-to-nitrogen (O/N) ratio in SiON provides an effective way to engineer its optical and mechanical properties, making it a great platform for the investigation of on-chip optomechanical interactions, especially the stimulated Brillouin scattering (SBS). Here, we report the Brillouin nonlinearity characterization of a SiON platform with a specific O/N ratio (characterized by a refractive index of n = 1.65). First, we introduce this particular SiON platform with fabrication details. Subsequently, we discuss various techniques for the on-chip Brillouin nonlinearity characterizations. In particular, we focus on the intensity-modulated pump-probe lock-in amplifier technique, which enables ultra-sensitive characterization. Finally, we analyze the Brillouin nonlinearities of this SiON platform and compare them with other SiON platforms. This work underscores the potential of SiON for on-chip Brillouin-based applications. Moreover, it paves the way for Brillouin nonlinearity characterization across various material platforms.
UR - http://www.scopus.com/inward/record.url?scp=85205951812&partnerID=8YFLogxK
U2 - 10.1364/OME.522184
DO - 10.1364/OME.522184
M3 - Article
SN - 2159-3930
VL - 14
SP - 2225
EP - 22238
JO - Optical materials express
JF - Optical materials express
IS - 10
ER -