Broadband PureB Ge-on-Si photodiodes

Lis K. Nanver, Vinayak V. Hassan, Asma Attariabad, Nicholas Rosson, Chantal J. Arena

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Abstract

Broadband PureB Ge-on-Si photodiodes were fabricated by <italic>in-situ</italic> capping of n-type Ge-islands grown by chemical-vapor deposition on Si with a 10-nm-thick pure boron layer. Using deposition temperatures from 575&#x00B0;C - 700&#x00B0;C, the B-layer forms p+-like anodes with nm-shallow junctions and low dark currents, enabling close to ideal responsivities of 0.13, 0.37, 0.48, and 0.19 A/W at wavelengths 406, 670, 1310 and 1550 nm, respectively.

Original languageEnglish
Number of pages4
JournalIEEE electron device letters
DOIs
Publication statusAccepted/In press - 2024

Keywords

  • Broadband
  • chemical-vapor deposition
  • germanium
  • photodiodes
  • pure boron
  • responsivity
  • ultrashallow junctions

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