Buffer layers for superconducting Y-Ba-Cu-O thin films on Si and SiO2

R. de Reus, F.W. Saris, G.J. van der Kolk, C. Witmer, B. Dam, D.H.A. Blank, D.J. Adelerhof, J. Flokstra

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Abstract

By direct deposition onto hot substrates, using laser ablation, crystalline YBa2Cu3O7−δ (123) was obtained at 650°C on SiO2, but not on (100) Si substrates. The 123 film did not show a superconducting transition due to interfacial reactions. The failure temperature of insulating buffer layers, such as tantalum oxide and hafnium oxide, is around 500 °C. Although MgO and BaZrO3 show a high stability in contact with 123 at 900 °C, they fail as a diffusion barrier at much lower temperatures. Below 400 °C barium diffuses through MgO, which itself remains unaffected. Using BaZrO3 the same happens around 700 °C. BaF2 fails as a diffusion barrier below 400 °C. Using laser ablation, high quality 123 films were grown on ZrO2 buffer layers above 650 °C. For the first time we report superconducting transitions of 123 deposited at 650 °C onto an amorphous metal alloy, Ir45Ta55. The problems encountered using conducting buffer layers are either a low reaction temperature with 123 (HfB2 and HfN) or oxidation of the metal alloy (Ir45Ta55) around 400 °C. Intermediate noble metal layers silver and Ag/Au/Ag could not prevent oxygen diffusion towards the underlying buffer layer.
Original languageEnglish
Pages (from-to)135-147
Number of pages13
JournalMaterials science & engineering B
Volume7
Issue number1-2
DOIs
Publication statusPublished - 1990

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    de Reus, R., Saris, F. W., van der Kolk, G. J., Witmer, C., Dam, B., Blank, D. H. A., ... Flokstra, J. (1990). Buffer layers for superconducting Y-Ba-Cu-O thin films on Si and SiO2. Materials science & engineering B, 7(1-2), 135-147. https://doi.org/10.1016/0921-5107(90)90018-7