Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate

Edin Sarajlic; Meint J. de Boer; Henricus V. Jansen; N. Arnal; M. Puech; Gijsbertus J.M. Krijnen; Michael Curt Elwenspoek

doi:10.1109/SENSOR.2005.1497344

Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate

Edin Sarajlic, Meint J. de Boer, Henricus V. Jansen, N. Arnal, M. Puech, Gijsbertus J.M. Krijnen, Michael Curt Elwenspoek

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

212 Downloads (Pure)

Abstract

We present a bulk micromachining technology, based on vertical trench isolation, for fabrication of two-level MEMS in a standard monocrystalline silicon substrate. The technology, suitable for full integration with on-chip electronics, employs double-side processing to obtain functional micromechanical structures on both sides of the substrate. Etching and release of these microstructures are performed in a single plasma chamber allowing dry, low temperature processing. Utilizing double-side processing, high-aspect-ratio monocrystalline MEMS with integrated vertical electrical insulation on fixed and even on movable parts are fabricated on one side of the wafer and, at the same time, mechanically and electrically coupled with released micromechanical structures on the opposite side. This opens new design opportunities to improve performance and functionality of MEMS devices. The presented technology is employed for fabrication of electrostatic XY-scanners for probe-based data storage with a significantly larger effective recording area proving the feasibility and large potential of this technology

Original language	Undefined
Title of host publication	Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005
Place of Publication	Los Alamitos
Publisher	IEEE
Pages	1404-1405
Number of pages	2
ISBN (Print)	0-7803-8994-8
DOIs	https://doi.org/10.1109/SENSOR.2005.1497344
Publication status	Published - Jun 2005
Event	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005 Conference number: 13

Publication series

Name
Publisher	IEEE
Volume	2

Conference

Conference	13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005
Abbreviated title	TRANSDUCERS
Country/Territory	Korea, Republic of
City	Seoul
Period	5/06/05 → 9/06/05

Keywords

EWI-10271
METIS-224199
IR-52580

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/SENSOR.2005.1497344

Cite this

Sarajlic, E., de Boer, M. J., Jansen, H. V., Arnal, N., Puech, M., Krijnen, G. J. M., & Elwenspoek, M. C. (2005). Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate. In Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005 (pp. 1404-1405). IEEE. https://doi.org/10.1109/SENSOR.2005.1497344

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title = "Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate",

abstract = "We present a bulk micromachining technology, based on vertical trench isolation, for fabrication of two-level MEMS in a standard monocrystalline silicon substrate. The technology, suitable for full integration with on-chip electronics, employs double-side processing to obtain functional micromechanical structures on both sides of the substrate. Etching and release of these microstructures are performed in a single plasma chamber allowing dry, low temperature processing. Utilizing double-side processing, high-aspect-ratio monocrystalline MEMS with integrated vertical electrical insulation on fixed and even on movable parts are fabricated on one side of the wafer and, at the same time, mechanically and electrically coupled with released micromechanical structures on the opposite side. This opens new design opportunities to improve performance and functionality of MEMS devices. The presented technology is employed for fabrication of electrostatic XY-scanners for probe-based data storage with a significantly larger effective recording area proving the feasibility and large potential of this technology",

keywords = "EWI-10271, METIS-224199, IR-52580",

author = "Edin Sarajlic and {de Boer}, {Meint J.} and Jansen, {Henricus V.} and N. Arnal and M. Puech and Krijnen, {Gijsbertus J.M.} and Elwenspoek, {Michael Curt}",

year = "2005",

month = jun,

doi = "10.1109/SENSOR.2005.1497344",

language = "Undefined",

isbn = "0-7803-8994-8",

publisher = "IEEE",

pages = "1404--1405",

booktitle = "Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005",

address = "United States",

note = "13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005 ; Conference date: 05-06-2005 Through 09-06-2005",

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Sarajlic, E, de Boer, MJ, Jansen, HV, Arnal, N, Puech, M, Krijnen, GJM & Elwenspoek, MC 2005, Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate. in Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005. IEEE, Los Alamitos, pp. 1404-1405, 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497344

Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate. / Sarajlic, Edin; de Boer, Meint J.; Jansen, Henricus V. et al.
Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005. Los Alamitos: IEEE, 2005. p. 1404-1405.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Bulk micromachining technology for fabrication of two-level mems in standard silicon substrate

AU - Sarajlic, Edin

AU - de Boer, Meint J.

AU - Jansen, Henricus V.

AU - Arnal, N.

AU - Puech, M.

AU - Krijnen, Gijsbertus J.M.

AU - Elwenspoek, Michael Curt

N1 - Conference code: 13

PY - 2005/6

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N2 - We present a bulk micromachining technology, based on vertical trench isolation, for fabrication of two-level MEMS in a standard monocrystalline silicon substrate. The technology, suitable for full integration with on-chip electronics, employs double-side processing to obtain functional micromechanical structures on both sides of the substrate. Etching and release of these microstructures are performed in a single plasma chamber allowing dry, low temperature processing. Utilizing double-side processing, high-aspect-ratio monocrystalline MEMS with integrated vertical electrical insulation on fixed and even on movable parts are fabricated on one side of the wafer and, at the same time, mechanically and electrically coupled with released micromechanical structures on the opposite side. This opens new design opportunities to improve performance and functionality of MEMS devices. The presented technology is employed for fabrication of electrostatic XY-scanners for probe-based data storage with a significantly larger effective recording area proving the feasibility and large potential of this technology

AB - We present a bulk micromachining technology, based on vertical trench isolation, for fabrication of two-level MEMS in a standard monocrystalline silicon substrate. The technology, suitable for full integration with on-chip electronics, employs double-side processing to obtain functional micromechanical structures on both sides of the substrate. Etching and release of these microstructures are performed in a single plasma chamber allowing dry, low temperature processing. Utilizing double-side processing, high-aspect-ratio monocrystalline MEMS with integrated vertical electrical insulation on fixed and even on movable parts are fabricated on one side of the wafer and, at the same time, mechanically and electrically coupled with released micromechanical structures on the opposite side. This opens new design opportunities to improve performance and functionality of MEMS devices. The presented technology is employed for fabrication of electrostatic XY-scanners for probe-based data storage with a significantly larger effective recording area proving the feasibility and large potential of this technology

KW - EWI-10271

KW - METIS-224199

KW - IR-52580

U2 - 10.1109/SENSOR.2005.1497344

DO - 10.1109/SENSOR.2005.1497344

M3 - Conference contribution

SN - 0-7803-8994-8

SP - 1404

EP - 1405

BT - Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems 2005

PB - IEEE

CY - Los Alamitos

T2 - 13th International Conferences on Solid-State Sensors, Actuators and Mircosystems, TRANSDUCERS 2005

Y2 - 5 June 2005 through 9 June 2005

ER -