C-V profiling of ultra-shallow junctions using step-like background profiles

Milo Popadić*, Vladimir Milovanović, Cuiqin Xu, Francesco Sarubbi, Lis K. Nanver

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

A novel C-V profiling method that enables profiling of ultra-shallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or some other abruptly changing background profile. The method is theoretically described and confirmed by MEDICI simulations. Experimental use of the method requires the fabrication of both a p-n and a Schottky diode with identical background profiles. Here, a step-like background As profile and an ultra-shallow and ultra-abrupt p+ junction were achieved by Si epitaxy and pure boron RPCVD, respectively. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of about 2.5 nm/dec were fabricated and measured. The way to create an optimal experimental situation in terms of measurement range and accuracy is discussed.

Original languageEnglish
Pages (from-to)890-896
Number of pages7
JournalSolid-state electronics
Volume54
Issue number9
DOIs
Publication statusPublished - 1 Sep 2010
Externally publishedYes

Keywords

  • C-V profiling
  • Doping characterization
  • Ultra-shallow junctions

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