C-V profiling of ultrashallow junctions using a step-like background doping profile

Miloš Popadić; Cuiqin Xu; Francesco Sarubbi; Lis K. Nanver

doi:10.1109/ESSDERC.2009.5331556

C-V profiling of ultrashallow junctions using a step-like background doping profile

Miloš Popadić^*, Cuiqin Xu, Francesco Sarubbi, Lis K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

A novel C-V profiling method that enables profiling of ultrashallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or other abruptly changing background profile. The method is analytically described and confirmed by MEDICI simulations. A step-like background As profile and an ultrashallow and ultra-abrupt p⁺ junction were grown by respectively Si and pure boron RPCVD. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of around 2.5 nm/dec were fabricated and measured.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	303-306
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331556
Publication status	Published - 1 Dec 2009
Externally published	Yes
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: 14 Sept 2009 → 18 Sept 2009

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Abbreviated title	ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	14/09/09 → 18/09/09

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10.1109/ESSDERC.2009.5331556

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title = "C-V profiling of ultrashallow junctions using a step-like background doping profile",

abstract = "A novel C-V profiling method that enables profiling of ultrashallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or other abruptly changing background profile. The method is analytically described and confirmed by MEDICI simulations. A step-like background As profile and an ultrashallow and ultra-abrupt p+ junction were grown by respectively Si and pure boron RPCVD. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of around 2.5 nm/dec were fabricated and measured.",

author = "Milo{\v s} Popadi{\'c} and Cuiqin Xu and Francesco Sarubbi and Nanver, {Lis K.}",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/ESSDERC.2009.5331556",

language = "English",

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pages = "303--306",

booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

note = "39th European Solid-State Device Research Conference, ESSDERC 2009, ESSDERC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

}

Popadić, M, Xu, C, Sarubbi, F & Nanver, LK 2009, C-V profiling of ultrashallow junctions using a step-like background doping profile. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331556, pp. 303-306, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/09/09. https://doi.org/10.1109/ESSDERC.2009.5331556

C-V profiling of ultrashallow junctions using a step-like background doping profile. / Popadić, Miloš; Xu, Cuiqin; Sarubbi, Francesco et al.
ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 303-306 5331556.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - C-V profiling of ultrashallow junctions using a step-like background doping profile

AU - Popadić, Miloš

AU - Xu, Cuiqin

AU - Sarubbi, Francesco

AU - Nanver, Lis K.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - A novel C-V profiling method that enables profiling of ultrashallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or other abruptly changing background profile. The method is analytically described and confirmed by MEDICI simulations. A step-like background As profile and an ultrashallow and ultra-abrupt p+ junction were grown by respectively Si and pure boron RPCVD. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of around 2.5 nm/dec were fabricated and measured.

AB - A novel C-V profiling method that enables profiling of ultrashallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or other abruptly changing background profile. The method is analytically described and confirmed by MEDICI simulations. A step-like background As profile and an ultrashallow and ultra-abrupt p+ junction were grown by respectively Si and pure boron RPCVD. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of around 2.5 nm/dec were fabricated and measured.

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U2 - 10.1109/ESSDERC.2009.5331556

DO - 10.1109/ESSDERC.2009.5331556

M3 - Conference contribution

AN - SCOPUS:72849114760

SN - 9781424443536

SP - 303

EP - 306

BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

T2 - 39th European Solid-State Device Research Conference, ESSDERC 2009

Y2 - 14 September 2009 through 18 September 2009

ER -

C-V profiling of ultrashallow junctions using a step-like background doping profile

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