C-V profiling of ultrashallow junctions using a step-like background doping profile

Miloš Popadić*, Cuiqin Xu, Francesco Sarubbi, Lis K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A novel C-V profiling method that enables profiling of ultrashallow and ultra-abrupt junctions is described. The method takes advantage of a peculiar shape of the C-V characteristic that is obtained with a step-like or other abruptly changing background profile. The method is analytically described and confirmed by MEDICI simulations. A step-like background As profile and an ultrashallow and ultra-abrupt p+ junction were grown by respectively Si and pure boron RPCVD. Using these techniques, junctions with a doping depth of around 7 nm and with a slope of around 2.5 nm/dec were fabricated and measured.

Original languageEnglish
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages303-306
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: 14 Sep 200918 Sep 2009

Conference

Conference39th European Solid-State Device Research Conference, ESSDERC 2009
Abbreviated titleESSDERC 2009
CountryGreece
CityAthens
Period14/09/0918/09/09

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Popadić, M., Xu, C., Sarubbi, F., & Nanver, L. K. (2009). C-V profiling of ultrashallow junctions using a step-like background doping profile. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 303-306). [5331556] https://doi.org/10.1109/ESSDERC.2009.5331556