C-V Test Structures for Metal Gate CMOS

R.G. Bankras, M.P.J. Tiggelman, M. Adi Negara, G.T. Sasse, Jurriaan Schmitz

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    1 Citation (Scopus)
    148 Downloads (Pure)

    Abstract

    Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n+-p+ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.
    Original languageEnglish
    Title of host publicationProceedings of the International Conference on Microelectronic Test Structures (ICMTS)
    Place of PublicationPiscataway
    PublisherIEEE EDS
    Pages226-229
    Number of pages4
    ISBN (Print)1-4244-0167-4
    DOIs
    Publication statusPublished - 6 Mar 2006
    Event19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States
    Duration: 6 Mar 20069 Mar 2006
    Conference number: 19
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html

    Publication series

    NameElectron Devices Society
    PublisherIEEE

    Conference

    Conference19th International Conference on Microelectronic Test Structures, ICMTS 2006
    Abbreviated titleICMTS
    CountryUnited States
    CityAustin
    Period6/03/069/03/06
    Internet address

    Keywords

    • SC-CICC: Characterization of IC Components
    • IR-57650
    • METIS-231047
    • EWI-7584

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  • Cite this

    Bankras, R. G., Tiggelman, M. P. J., Negara, M. A., Sasse, G. T., & Schmitz, J. (2006). C-V Test Structures for Metal Gate CMOS. In Proceedings of the International Conference on Microelectronic Test Structures (ICMTS) (pp. 226-229). (Electron Devices Society). Piscataway: IEEE EDS. https://doi.org/10.1109/ICMTS.2006.1614309