C-V Test Structures for Metal Gate CMOS

R.G. Bankras; M.P.J. Tiggelman; M. Adi Negara; G.T. Sasse; Jurriaan Schmitz

doi:10.1109/ICMTS.2006.1614309

C-V Test Structures for Metal Gate CMOS

R.G. Bankras, M.P.J. Tiggelman, M. Adi Negara, G.T. Sasse, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n+-p+ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.

Original language	English
Title of host publication	Proceedings of the International Conference on Microelectronic Test Structures (ICMTS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	226-229
Number of pages	4
ISBN (Print)	1-4244-0167-4
DOIs	https://doi.org/10.1109/ICMTS.2006.1614309
Publication status	Published - 6 Mar 2006
Event	19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States Duration: 6 Mar 2006 → 9 Mar 2006 Conference number: 19 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html

Conference

Conference	19th International Conference on Microelectronic Test Structures, ICMTS 2006
Abbreviated title	ICMTS
Country/Territory	United States
City	Austin
Period	6/03/06 → 9/03/06
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html

Keywords

SC-CICC: Characterization of IC Components

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10.1109/ICMTS.2006.1614309

Bankras_submitted_ICMTS2006Submitted version, 190 KBLicence: Unspecified

Cite this

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title = "C-V Test Structures for Metal Gate CMOS",

abstract = "Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n+-p+ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.",

keywords = "SC-CICC: Characterization of IC Components",

author = "R.G. Bankras and M.P.J. Tiggelman and Negara, {M. Adi} and G.T. Sasse and Jurriaan Schmitz",

year = "2006",

month = mar,

day = "6",

doi = "10.1109/ICMTS.2006.1614309",

language = "English",

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pages = "226--229",

booktitle = "Proceedings of the International Conference on Microelectronic Test Structures (ICMTS)",

publisher = "IEEE",

address = "United States",

note = "19th International Conference on Microelectronic Test Structures, ICMTS 2006, ICMTS ; Conference date: 06-03-2006 Through 09-03-2006",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html",

}

Bankras, RG, Tiggelman, MPJ, Negara, MA, Sasse, GT & Schmitz, J 2006, C-V Test Structures for Metal Gate CMOS. in Proceedings of the International Conference on Microelectronic Test Structures (ICMTS). IEEE, Piscataway, NJ, pp. 226-229, 19th International Conference on Microelectronic Test Structures, ICMTS 2006, Austin, Texas, United States, 6/03/06. https://doi.org/10.1109/ICMTS.2006.1614309

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T1 - C-V Test Structures for Metal Gate CMOS

AU - Bankras, R.G.

AU - Tiggelman, M.P.J.

AU - Negara, M. Adi

AU - Sasse, G.T.

AU - Schmitz, Jurriaan

N1 - Conference code: 19

PY - 2006/3/6

Y1 - 2006/3/6

N2 - Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n+-p+ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.

AB - Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of n+-p+ diffusion edges. We show, both theoretically and with experimental data, the impact of both design modifications on C-V measurement results.

KW - SC-CICC: Characterization of IC Components

U2 - 10.1109/ICMTS.2006.1614309

DO - 10.1109/ICMTS.2006.1614309

M3 - Conference contribution

SN - 1-4244-0167-4

SP - 226

EP - 229

BT - Proceedings of the International Conference on Microelectronic Test Structures (ICMTS)

PB - IEEE

CY - Piscataway, NJ

T2 - 19th International Conference on Microelectronic Test Structures, ICMTS 2006

Y2 - 6 March 2006 through 9 March 2006

ER -

C-V Test Structures for Metal Gate CMOS

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