C60 thin film transistors

R.C. Haddon, A.S. Perel, R.C. Morris, T.T.M. Palstra, A.F. Hebard, R.M. Fleming

Research output: Contribution to journalArticleAcademicpeer-review

528 Citations (Scopus)
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Abstract

N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on‐off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.
Original languageEnglish
Pages (from-to)121-123
JournalApplied physics letters
Volume67
Issue number1
DOIs
Publication statusPublished - May 1995
Externally publishedYes

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