C60 thin film transistors

R.C. Haddon; A.S. Perel; R.C. Morris; T.T.M.  Palstra; A.F. Hebard; R.M. Fleming

doi:10.1063/1.115503

C60 thin film transistors

R.C. Haddon, A.S. Perel, R.C. Morris, T.T.M. Palstra, A.F. Hebard, R.M. Fleming

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on‐off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.

Original language	English
Pages (from-to)	121-123
Journal	Applied physics letters
Volume	67
Issue number	1
DOIs	https://doi.org/10.1063/1.115503
Publication status	Published - May 1995
Externally published	Yes

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title = "C60 thin film transistors",

abstract = "N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on‐off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.",

author = "R.C. Haddon and A.S. Perel and R.C. Morris and T.T.M. Palstra and A.F. Hebard and R.M. Fleming",

year = "1995",

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pages = "121--123",

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T1 - C60 thin film transistors

AU - Haddon, R.C.

AU - Perel, A.S.

AU - Morris, R.C.

AU - Palstra, T.T.M.

AU - Hebard, A.F.

AU - Fleming, R.M.

PY - 1995/5

Y1 - 1995/5

N2 - N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on‐off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.

AB - N‐channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on‐off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.

U2 - 10.1063/1.115503

DO - 10.1063/1.115503

M3 - Article

SN - 0003-6951

VL - 67

SP - 121

EP - 123

JO - Applied physics letters

JF - Applied physics letters

IS - 1

ER -

C60 thin film transistors

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