Capillary filling of sub- 10 nm nanochannels

J. Haneveld, Niels Roelof Tas, N. Brunets, Henricus V. Jansen, Michael Curt Elwenspoek

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    95 Citations (Scopus)

    Abstract

    We have developed a procedure for accurate fabrication of silicon-based nanochannels down to a few nanometer channel height, based on the use of a thin thermal silicon oxide spacer layer. Nanochannels with a predictable and carefully measured height between 5 and 50 nm were successfully fabricated and filled with de-ionized water. For all channel heights the filling kinetics behaves according to the classical Washburn law for capillary filling, with a small correction for a loss of liquid at the moving front at a constant rate and a smaller than expected Washburn coefficient (up to a factor of 1.6 smaller for water in 5 nm channels)
    Original languageUndefined
    Article number10.1063/1.2952053
    Pages (from-to)14309
    Number of pages6
    JournalJournal of Applied Physics
    Volume104
    Issue numberWoTUG-31/1
    DOIs
    Publication statusPublished - 2008

    Keywords

    • METIS-254924
    • EWI-14247
    • IR-62564

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