Abstract
We have developed a procedure for accurate fabrication of silicon-based nanochannels down to a few nanometer channel height, based on the use of a thin thermal silicon oxide spacer layer. Nanochannels with a predictable and carefully measured height between 5 and 50 nm were successfully fabricated and filled with de-ionized water. For all channel heights the filling kinetics behaves according to the classical Washburn law for capillary filling, with a small correction for a loss of liquid at the moving front at a constant rate and a smaller than expected Washburn coefficient (up to a factor of 1.6 smaller for water in 5 nm channels)
Original language | Undefined |
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Article number | 10.1063/1.2952053 |
Pages (from-to) | 14309 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 104 |
Issue number | WoTUG-31/1 |
DOIs | |
Publication status | Published - 2008 |
Keywords
- METIS-254924
- EWI-14247
- IR-62564