Abstract
We have developed a procedure for accurate fabrication of silicon-based nanochannels down to a few nanometer channel height, based on the use of a thin thermal silicon oxide spacer layer. Nanochannels with a predictable and carefully measured height between 5 and 50 nm were successfully fabricated and filled with de-ionized water. For all channel heights the filling kinetics behaves according to the classical Washburn law for capillary filling, with a small correction for a loss of liquid at the moving front at a constant rate and a smaller than expected Washburn coefficient (up to a factor of 1.6 smaller for water in 5 nm channels)
| Original language | English |
|---|---|
| Pages (from-to) | 14309 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 104 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2008 |
Keywords
- 2020 OA procedure
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