CF3+ etching silicon surface: A molecular dynamics study

C. Zhao; X. Lu; P. He; P. Zhang; W. Sun; Jingwei Zhang; F. Chen; F. Gou

doi:10.1016/j.vacuum.2011.06.003

CF3+ etching silicon surface: A molecular dynamics study

C. Zhao, X. Lu, P. He, P. Zhang, W. Sun, Jingwei Zhang, F. Chen, F. Gou

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a “fluorocarbosilyl” layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF.

Original language	English
Pages (from-to)	913-916
Journal	Vacuum
Volume	86
Issue number	7
DOIs	https://doi.org/10.1016/j.vacuum.2011.06.003
Publication status	Published - 2012

Keywords

IR-100034
METIS-298243

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title = "CF3+ etching silicon surface: A molecular dynamics study",

abstract = "In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a “fluorocarbosilyl” layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF.",

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T1 - CF3+ etching silicon surface: A molecular dynamics study

AU - Zhao, C.

AU - Lu, X.

AU - He, P.

AU - Zhang, P.

AU - Sun, W.

AU - Zhang, Jingwei

AU - Chen, F.

AU - Gou, F.

PY - 2012

Y1 - 2012

N2 - In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a “fluorocarbosilyl” layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF.

AB - In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a “fluorocarbosilyl” layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF.

KW - IR-100034

KW - METIS-298243

U2 - 10.1016/j.vacuum.2011.06.003

DO - 10.1016/j.vacuum.2011.06.003

M3 - Article

VL - 86

SP - 913

EP - 916

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 7

ER -