CF3+ etching silicon surface: A molecular dynamics study

C. Zhao, X. Lu, P. He, P. Zhang, W. Sun, Jingwei Zhang, F. Chen, F. Gou

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

In this study, a molecular dynamics simulation method has been employed to investigate CF3 + ions, bombarding Si surface with the energy of 100, 200, 300 and 400 eV and an incident angle of 45 degrees with respect to the normal. The simulation results show that when CF3+ ions approach the Si surface they are broken up into small fragments. Some fragments deposit on the surface to form a “fluorocarbosilyl” layer. The erosion of Si is dominated by formation of SiF3 followed by SiF2 species and in minority species SiF.
Original languageEnglish
Pages (from-to)913-916
JournalVacuum
Volume86
Issue number7
DOIs
Publication statusPublished - 2012

Keywords

  • IR-100034
  • METIS-298243

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