Channel profile engineering of 0.1 μm-Si MOSFETs by through-the-gate implantation

Y.V. Ponomarev, P.A. Stolk, A.C.M.C. van Brandenburg, R. Roes, A.H. Montree, J. Schmitz, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    21 Citations (Scopus)
    60 Downloads (Pure)


    A novel approach to the SSR channel profile formation for MOSFETs is suggested, with dopant implantation in the late stages of the processing, with the gate, source/drain already in (`TGi'). Only a single damage/activation anneal and the back-end thermal budget are experienced by the implanted dopants, which results in steep profiles even when light boron ions are used. High-performance NMOS devices with excellent SCE control designed for low-voltage digital, analog and RF operation were realized using this technique. For PMOS the use of TGi is restricted by significant diffusion of source/drain extensions due to the TGi damage induced TED.

    Original languageEnglish
    Title of host publicationInternational Electron Devices Meeting 1998
    Subtitle of host publicationSan Francisco, CA, December 6-9, 1998, IEDM technical digest
    Number of pages4
    ISBN (Print)0-7803-4774-9, 0-7803-4776-5
    Publication statusPublished - 1 Dec 1998
    Event1998 IEEE International Electron Devices Meeting - San Francisco, United States
    Duration: 6 Dec 19989 Dec 1998

    Publication series

    NameInternational Electron Devices Meeting, IEDM Technical Digest
    ISSN (Print)0163-1918


    Conference1998 IEEE International Electron Devices Meeting
    Country/TerritoryUnited States
    CitySan Francisco


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