Channeling in helium ion microscopy: Mapping of crystal orientation

V. Veligura, G. Hlawacek, Raoul van Gastel, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

29 Citations (Scopus)
56 Downloads (Pure)

Abstract

Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.
Original languageEnglish
Pages (from-to)501-506
Number of pages6
JournalBeilstein journal of nanotechnology
Volume3
DOIs
Publication statusPublished - 2012

Keywords

  • METIS-287264
  • IR-81095

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