Channeling in helium ion microscopy: Mapping of crystal orientation

V. Veligura, G. Hlawacek, Raoul van Gastel, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.
Original languageEnglish
Pages (from-to)501-506
Number of pages6
JournalBeilstein journal of nanotechnology
Volume3
DOIs
Publication statusPublished - 2012

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Helium
helium ions
Crystal orientation
Microscopic examination
Ions
microscopy
Electrons
crystals
Particle beams
electrons
Charged particles
Image quality
Crystal structure
particle beams
surface layers
charged particles
helium
crystal structure
Experiments
high resolution

Keywords

  • METIS-287264
  • IR-81095

Cite this

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title = "Channeling in helium ion microscopy: Mapping of crystal orientation",
abstract = "Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.",
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Channeling in helium ion microscopy: Mapping of crystal orientation. / Veligura, V.; Hlawacek, G.; van Gastel, Raoul; Zandvliet, Henricus J.W.; Poelsema, Bene.

In: Beilstein journal of nanotechnology, Vol. 3, 2012, p. 501-506.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Channeling in helium ion microscopy: Mapping of crystal orientation

AU - Veligura, V.

AU - Hlawacek, G.

AU - van Gastel, Raoul

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

N1 - Optics (see also 3311) Solid state physics (see also 2307) Niet in een andere rubriek onder te brengen Open access article

PY - 2012

Y1 - 2012

N2 - Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.

AB - Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling through the crystal structure of the bulk of the material can occur. Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict channeling maxima. Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.

KW - METIS-287264

KW - IR-81095

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VL - 3

SP - 501

EP - 506

JO - Beilstein journal of nanotechnology

JF - Beilstein journal of nanotechnology

SN - 2190-4286

ER -