The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.
|Number of pages||7|
|Publication status||Published - 5 Aug 2007|
|Event||Workshop on Reliability Of Compound Semi-conductors, ROSC 2006 - San Antonio, United States|
Duration: 12 Nov 2006 → 12 Nov 2006