Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks

P.K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, A.W. Groenland

    Research output: Contribution to journalConference articleAcademicpeer-review

    12 Citations (Scopus)


    The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.
    Original languageEnglish
    Pages (from-to)1195-1201
    Number of pages7
    JournalMicroelectronics reliability
    Issue number8
    Publication statusPublished - 5 Aug 2007
    EventWorkshop on Reliability Of Compound Semi-conductors, ROSC 2006 - San Antonio, United States
    Duration: 12 Nov 200612 Nov 2006

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