Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks

P.K. Hurley; K. Cherkaoui; S. McDonnell; G. Hughes; A.W. Groenland

doi:10.1016/j.microrel.2006.09.030

Characterisation and passivation of interface defects in (1 0 0)/Si/SiO₂/HfO₂/TiN gate stacks

P.K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, A.W. Groenland

Research output: Contribution to journal › Conference article › Academic › peer-review

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Abstract

The density and energy distribution of electrically active interface defects in the (100)Si/SiO₂/HfO₂ system are presented. Experimental results are analysed for HfO₂ thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.

Original language	English
Pages (from-to)	1195-1201
Number of pages	7
Journal	Microelectronics reliability
Volume	47
Issue number	8
DOIs	https://doi.org/10.1016/j.microrel.2006.09.030
Publication status	Published - 5 Aug 2007
Event	Workshop on Reliability Of Compound Semi-conductors, ROSC 2006 - San Antonio, United States Duration: 12 Nov 2006 → 12 Nov 2006

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10.1016/j.microrel.2006.09.030

Cite this

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title = "Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks",

abstract = "The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.",

author = "P.K. Hurley and K. Cherkaoui and S. McDonnell and G. Hughes and A.W. Groenland",

year = "2007",

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journal = "Microelectronics reliability",

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TY - JOUR

T1 - Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks

AU - Hurley, P.K.

AU - Cherkaoui, K.

AU - McDonnell, S.

AU - Hughes, G.

AU - Groenland, A.W.

PY - 2007/8/5

Y1 - 2007/8/5

N2 - The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.

AB - The density and energy distribution of electrically active interface defects in the (100)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (100)Si substrates.The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 C.

U2 - 10.1016/j.microrel.2006.09.030

DO - 10.1016/j.microrel.2006.09.030

M3 - Conference article

SN - 0026-2714

VL - 47

SP - 1195

EP - 1201

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - 8

T2 - Workshop on Reliability Of Compound Semi-conductors, ROSC 2006

Y2 - 12 November 2006 through 12 November 2006