Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties

Q.D. Nguyen, M. Elwenspoek

    Research output: Contribution to journalConference articleAcademicpeer-review

    7 Citations (Scopus)
    67 Downloads (Pure)

    Abstract

    Using the network etch rate function model, the anisotropic etch rate of p-type single crystal silicon was characterised in terms of microscopic properties including step velocity, step and terrace roughening. The anisotropic etch rate data needed have been obtained using a combination of 2 wagon wheel patterns on different substrate and 1 offset trench pattern. Using this procedure the influence of an applied potential has been investigated in terms of microscopic properties. Model parameter trends show a good correlation with chemical/electrochemical reaction mechanism and mono- and dihydride terminated steps reactivity difference. Results also indicate a minimum in (111) terrace roughening which results in a peak in anisotropic ratio at the non-OCP applied potential of -1250 mV vs OCP.
    Original languageEnglish
    Pages (from-to)1038-1043
    Number of pages7
    JournalJournal of physics: Conference series
    Volume34
    Issue number1
    DOIs
    Publication statusPublished - 1 May 2006

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