Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

H. W. van Zeijl; L. K. Nanver

doi:10.1109/ICSICT.1998.785810

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

H. W. van Zeijl^*, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

Abstract

In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using freestanding silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiN_x) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si₃N₄ for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiN_x spacers.

Original language	English
Title of host publication	1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings
Pages	98-101
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.1998.785810
Publication status	Published - 1 Dec 1998
Externally published	Yes
Event	1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998 Conference number: 5

Conference

Conference	1998 5th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Beijing
Period	21/10/98 → 23/10/98

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10.1109/ICSICT.1998.785810

Cite this

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title = "Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization",

abstract = "In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using freestanding silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers.",

author = "{van Zeijl}, {H. W.} and Nanver, {L. K.}",

year = "1998",

month = dec,

day = "1",

doi = "10.1109/ICSICT.1998.785810",

language = "English",

isbn = "0-7803-4306-9",

pages = "98--101",

booktitle = "1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings",

note = "1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

}

van Zeijl, HW & Nanver, LK 1998, Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization. in 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings. pp. 98-101, 1998 5th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 21/10/98. https://doi.org/10.1109/ICSICT.1998.785810

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization. / van Zeijl, H. W.; Nanver, L. K.
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings. 1998. p. 98-101.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

AU - van Zeijl, H. W.

AU - Nanver, L. K.

N1 - Conference code: 5

PY - 1998/12/1

Y1 - 1998/12/1

N2 - In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using freestanding silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers.

AB - In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using freestanding silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers.

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U2 - 10.1109/ICSICT.1998.785810

DO - 10.1109/ICSICT.1998.785810

M3 - Conference contribution

AN - SCOPUS:0032226759

SN - 0-7803-4306-9

SP - 98

EP - 101

BT - 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings

T2 - 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -

Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

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