Characterisation of low-stress LPCVD silicon nitride in high frequency BJT's with self-aligned metallization

H. W. van Zeijl*, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

3 Citations (Scopus)

Abstract

In the self-aligned metallization process, a metal base contact is self-aligned to the emitter by using freestanding silicon nitride spacers directly on the silicon. Low-stress silicon nitride (SiNx) is electrically characterized for use as a spacer material in this process. A comparison is also made to stoichiometric Si3N4 for which mechanical stress related problems can in some cases reduce the device yield. Overall good device characteristics and yield are obtained with the SiNx spacers.

Original languageEnglish
Title of host publication1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings
Pages98-101
Number of pages4
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes
Event1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 21 Oct 199823 Oct 1998
Conference number: 5

Conference

Conference1998 5th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityBeijing
Period21/10/9823/10/98

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