Characterisation of sol-gel PZT films on Pt-coated substrates

Johannes G.E. Gardeniers, A. Smith, C. Cobianu

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Abstract

A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound Pt3Ti, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants ( epsilon approximately=480) and acceptable ferroelectric behaviour.
Original languageUndefined
Article number10.1088/0960-1317/5/2/025
Pages (from-to)153-155
Number of pages3
JournalJournal of micromechanics and microengineering
Volume5
Issue number5
DOIs
Publication statusPublished - 1995

Keywords

  • METIS-111583
  • IR-62530
  • EWI-14041

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