A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 degrees C-800 degrees C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound Pt3Ti, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants ( epsilon approximately=480) and acceptable ferroelectric behaviour.
Gardeniers, J. G. E., Smith, A., & Cobianu, C. (1995). Characterisation of sol-gel PZT films on Pt-coated substrates. Journal of micromechanics and microengineering, 5(5), 153-155. [10.1088/0960-1317/5/2/025]. https://doi.org/10.1088/0960-1317/5/2/025