Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

Svetlana Nikolajevna van Nieuwkasteele-Bystrova; J. Holleman; P.H. Woerlee; Robertus A.M. Wolters

Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

Svetlana Nikolajevna van Nieuwkasteele-Bystrova, J. Holleman, P.H. Woerlee, Robertus A.M. Wolters

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Abstract

Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92

Original language	English
Pages	9-13
Number of pages	5
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

Keywords

EWI-15605
diffusion barriers
SiLK
Copper
Interconnection
IR-67770

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http://eprints.eemcs.utwente.nl/secure2/15605/01/bystrova.pdf

Cite this

@conference{824e2fca7c91432dbe37477b777f4ad1,

title = "Characterisation of Ta-based barrier films on SiLK for Cu-metalisation",

abstract = "Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92",

keywords = "EWI-15605, diffusion barriers, SiLK, Copper, Interconnection, IR-67770",

author = "{van Nieuwkasteele-Bystrova}, {Svetlana Nikolajevna} and J. Holleman and P.H. Woerlee and Wolters, {Robertus A.M.}",

year = "2002",

month = nov,

day = "27",

language = "English",

pages = "9--13",

note = "5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, SAFE ; Conference date: 27-11-2002 Through 28-11-2002",

}

van Nieuwkasteele-Bystrova, SN, Holleman, J, Woerlee, PH & Wolters, RAM 2002, 'Characterisation of Ta-based barrier films on SiLK for Cu-metalisation', Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands, 27/11/02 - 28/11/02 pp. 9-13. <http://eprints.eemcs.utwente.nl/secure2/15605/01/bystrova.pdf>

TY - CONF

T1 - Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

AU - van Nieuwkasteele-Bystrova, Svetlana Nikolajevna

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wolters, Robertus A.M.

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92

AB - Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92

KW - EWI-15605

KW - diffusion barriers

KW - SiLK

KW - Copper

KW - Interconnection

KW - IR-67770

M3 - Paper

SP - 9

EP - 13

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -

Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

Abstract

Workshop

Keywords

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