Characterisation of Ta-based barrier films on SiLK for Cu-metalisation

Svetlana Nikolajevna van Nieuwkasteele-Bystrova, J. Holleman, P.H. Woerlee, Robertus A.M. Wolters

Research output: Contribution to conferencePaperAcademic

Abstract

Structures with Ta, TaxN1-x, Ta90C10, Ta95Si5 on SiLK were tested using in-situ 4- point probe resistance measurements during annealing up to 400oC. The change in normalized resistance by a factor of up to 2.58 was attributed to oxygen diffusion out of SiLK layer into the barriers. No direct chemical reaction between hydrocarbons from the SiLK and the barriers was observed. The concentration coefficient of resistivity for O in Ta was calculated to be 6.7μΩ*cm/at % for pure Ta and 2.65 μΩ*cm/at % in TaxN1-x with x=0.90-0.92
Original languageEnglish
Pages9-13
Number of pages5
Publication statusPublished - 27 Nov 2002
Event5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands
Duration: 27 Nov 200228 Nov 2002
Conference number: 5

Workshop

Workshop5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated titleSAFE
CountryNetherlands
CityVeldhoven
Period27/11/0228/11/02

Keywords

  • EWI-15605
  • diffusion barriers
  • SiLK
  • Copper
  • Interconnection
  • IR-67770

Fingerprint Dive into the research topics of 'Characterisation of Ta-based barrier films on SiLK for Cu-metalisation'. Together they form a unique fingerprint.

Cite this