Characteristic C - V profile as a signature for electrostatic doping in FD-SOI

Gaurav Gupta; Raymond J.E. Hueting

doi:10.1109/EUROSOI-ULIS49407.2020.9365304

Characteristic C - V profile as a signature for electrostatic doping in FD-SOI

Gaurav Gupta
, Raymond J.E. Hueting^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

204 Downloads (Pure)

Abstract

Metal-semiconductor-oxide-semiconductor (MSOS) structures form core parts of advanced FD-SOI devices. Extensive TCAD simulations of such MSOS structures show distinct C - V features, such as a characteristic capacitance hump, when contacted with extreme work function metals capable of supplying instant charge carriers in the lowly doped or undoped SOI layer. Such features are caused by volume inversion in the SOI layer, via electrostatic doping (ED), that becomes depleted for opposite biasing. The results show that the C - V analysis on relatively simple MSOS structures can be used to obtain the signature for ED in FD-SOI or alternative UTB devices.

Original language	English
Title of host publication	2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
Publisher	IEEE
ISBN (Electronic)	9781728187655
DOIs	https://doi.org/10.1109/EUROSOI-ULIS49407.2020.9365304
Publication status	Published - 9 Mar 2021
Event	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 - Caen, France Duration: 1 Sept 2020 → 30 Sept 2020

Conference

Conference	Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
Abbreviated title	EUROSOI-ULIS 2020
Country/Territory	France
City	Caen
Period	1/09/20 → 30/09/20

Keywords

2024 OA procedure
electrostatic doping
SOI
ultra-thin body
volume inversion
work function
capacitance-voltage profile

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10.1109/EUROSOI-ULIS49407.2020.9365304

Characteristic_C_-_V_profile_as_a_signature_for_electrostatic_doping_in_FD-SOIFinal published version, 966 KBLicence: Taverne

Cite this

@inproceedings{e80b0ad624a04cc38a13ad785e902e69,

title = "Characteristic C - V profile as a signature for electrostatic doping in FD-SOI",

abstract = "Metal-semiconductor-oxide-semiconductor (MSOS) structures form core parts of advanced FD-SOI devices. Extensive TCAD simulations of such MSOS structures show distinct C - V features, such as a characteristic capacitance hump, when contacted with extreme work function metals capable of supplying instant charge carriers in the lowly doped or undoped SOI layer. Such features are caused by volume inversion in the SOI layer, via electrostatic doping (ED), that becomes depleted for opposite biasing. The results show that the C - V analysis on relatively simple MSOS structures can be used to obtain the signature for ED in FD-SOI or alternative UTB devices.",

keywords = "2024 OA procedure, electrostatic doping, SOI, ultra-thin body, volume inversion, work function, capacitance-voltage profile",

author = "Gaurav Gupta and Hueting, \{Raymond J.E.\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020, EUROSOI-ULIS 2020 ; Conference date: 01-09-2020 Through 30-09-2020",

year = "2021",

month = mar,

day = "9",

doi = "10.1109/EUROSOI-ULIS49407.2020.9365304",

language = "English",

booktitle = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",

publisher = "IEEE",

address = "United States",

}

Gupta, G & Hueting, RJE 2021, Characteristic C - V profile as a signature for electrostatic doping in FD-SOI. in 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020., 9365304, IEEE, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020, Caen, France, 1/09/20. https://doi.org/10.1109/EUROSOI-ULIS49407.2020.9365304

Characteristic C - V profile as a signature for electrostatic doping in FD-SOI. / Gupta, Gaurav; Hueting, Raymond J.E.
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020. IEEE, 2021. 9365304.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Characteristic C - V profile as a signature for electrostatic doping in FD-SOI

AU - Gupta, Gaurav

AU - Hueting, Raymond J.E.

PY - 2021/3/9

Y1 - 2021/3/9

N2 - Metal-semiconductor-oxide-semiconductor (MSOS) structures form core parts of advanced FD-SOI devices. Extensive TCAD simulations of such MSOS structures show distinct C - V features, such as a characteristic capacitance hump, when contacted with extreme work function metals capable of supplying instant charge carriers in the lowly doped or undoped SOI layer. Such features are caused by volume inversion in the SOI layer, via electrostatic doping (ED), that becomes depleted for opposite biasing. The results show that the C - V analysis on relatively simple MSOS structures can be used to obtain the signature for ED in FD-SOI or alternative UTB devices.

AB - Metal-semiconductor-oxide-semiconductor (MSOS) structures form core parts of advanced FD-SOI devices. Extensive TCAD simulations of such MSOS structures show distinct C - V features, such as a characteristic capacitance hump, when contacted with extreme work function metals capable of supplying instant charge carriers in the lowly doped or undoped SOI layer. Such features are caused by volume inversion in the SOI layer, via electrostatic doping (ED), that becomes depleted for opposite biasing. The results show that the C - V analysis on relatively simple MSOS structures can be used to obtain the signature for ED in FD-SOI or alternative UTB devices.

KW - 2024 OA procedure

KW - electrostatic doping

KW - SOI

KW - ultra-thin body

KW - volume inversion

KW - work function

KW - capacitance-voltage profile

UR - https://www.scopus.com/pages/publications/85102972692

U2 - 10.1109/EUROSOI-ULIS49407.2020.9365304

DO - 10.1109/EUROSOI-ULIS49407.2020.9365304

M3 - Conference contribution

AN - SCOPUS:85102972692

BT - 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

PB - IEEE

T2 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020

Y2 - 1 September 2020 through 30 September 2020

ER -

Characteristic C - V profile as a signature for electrostatic doping in FD-SOI

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Keywords

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