Characteristics of Er-doped AI203 films deposited by reactive co-sputtering

A.M.S. Musa, H.J. van Weerden, T.H. Yau, Paul Lambeck

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    Abstract

    Er-doped Al2O3 thin films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers. The deposition process has been optimized with respect to the requirements originating from the application of these multilayer structures as integrated optical amplifiers for the third telecom window, i.e., the wavelength range 1.52-1.55 ¿m. The films obtained at a substrate temperature of only 400°C are amorphous and show a homogenous structure, without columns or grains. For slabguides, background losses smaller than 0.25 dB/cm have been obtained, even without any annealing. A relatively broad luminescence band, having an FWHM of ~55 nm around the 1.533-¿m wavelength, has been measured. From gain versus pumping power curves, an upconversion coefficient lower then 20·10-25 m3/s has been derived, being half of the values reported up to now in the literature. Simulations based on experimentally determined material parameters and assuming a channel attenuation of 0.5 dB/cm indicate, for 0.24 at.% Er channel devices with an optimal channel length of 7.7 cm, an amplification of 8 dB at 1.533 ¿m for a pump wavelength of 1.48 ¿m, and a pump power of only 8.7 mW
    Original languageEnglish
    Pages (from-to)1089-1097
    Number of pages8
    JournalIEEE journal of quantum electronics
    Volume36
    Issue number9
    DOIs
    Publication statusPublished - 2000

    Keywords

    • Optical Amplifiers
    • reactive co-sputtering
    • IR-23949
    • Er-doped Al2O3
    • METIS-128748
    • Integrated Optics

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