Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

S. Musa, H.J. van Weerden, T.H. Yau, Paul Lambeck

Research output: Contribution to conferencePaperAcademic

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Abstract

Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved
Original languageEnglish
Pages818-819
DOIs
Publication statusPublished - 1999
Event12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999 - San Francisco, United States
Duration: 8 Nov 199911 Nov 1999
Conference number: 12

Conference

Conference12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999
CountryUnited States
CitySan Francisco
Period8/11/9911/11/99

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