Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

S. Musa; H.J. van Weerden; T.H. Yau; Paul Lambeck

doi:10.1109/LEOS.1999.811985

Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

S. Musa
, H.J. van Weerden
, T.H. Yau
, Paul Lambeck

University of Twente

Research output: Contribution to conference › Paper

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Abstract

Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved

Original language	English
Pages	818-819
DOIs	https://doi.org/10.1109/LEOS.1999.811985
Publication status	Published - 1999
Event	12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999 - San Francisco, United States Duration: 8 Nov 1999 → 11 Nov 1999 Conference number: 12

Conference

Conference	12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999
Country/Territory	United States
City	San Francisco
Period	8/11/99 → 11/11/99

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10.1109/LEOS.1999.811985

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Musa, S., van Weerden, H. J., Yau, T. H., & Lambeck, P. (1999). Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification. 818-819. Paper presented at 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999, San Francisco, California, United States. https://doi.org/10.1109/LEOS.1999.811985

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title = "Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification",

abstract = "Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved",

author = "S. Musa and \{van Weerden\}, H.J. and T.H. Yau and Paul Lambeck",

year = "1999",

doi = "10.1109/LEOS.1999.811985",

language = "English",

pages = "818--819",

note = "12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999 ; Conference date: 08-11-1999 Through 11-11-1999",

}

Musa, S, van Weerden, HJ, Yau, TH & Lambeck, P 1999, 'Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification', Paper presented at 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999, San Francisco, United States, 8/11/99 - 11/11/99 pp. 818-819. https://doi.org/10.1109/LEOS.1999.811985

Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification. / Musa, S.; van Weerden, H.J.; Yau, T.H. et al.
1999. 818-819 Paper presented at 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999, San Francisco, California, United States.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

AU - Musa, S.

AU - van Weerden, H.J.

AU - Yau, T.H.

AU - Lambeck, Paul

N1 - Conference code: 12

PY - 1999

Y1 - 1999

N2 - Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved

AB - Er3+-doped Al2O3 films have been deposited by reactive co-sputtering onto thermally oxidized Si-wafers for use in optical amplification. Low background losses and broad emission band were measured. High concentration and gain can be achieved

U2 - 10.1109/LEOS.1999.811985

DO - 10.1109/LEOS.1999.811985

M3 - Paper

SP - 818

EP - 819

T2 - 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1999

Y2 - 8 November 1999 through 11 November 1999

ER -

Characteristics of Er3+:Al2O3 thin-films deposited by reactive co-sputtering for application in optical amplification

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