Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

V. Craciun; J. Elders; J.G.E. Gardeniers; Ian W. Boyd

doi:10.1063/1.112478

Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

V. Craciun, J. Elders, J.G.E. Gardeniers, Ian W. Boyd

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Abstract

This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.

Original language	English
Pages (from-to)	2963-2965
Number of pages	3
Journal	Applied physics letters
Volume	65
Issue number	23
DOIs	https://doi.org/10.1063/1.112478
Publication status	Published - 5 Dec 1994

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title = "Characteristics of high quality ZnO thin films deposited by pulsed laser deposition",

abstract = "This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.",

author = "V. Craciun and J. Elders and J.G.E. Gardeniers and Boyd, {Ian W.}",

year = "1994",

month = dec,

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doi = "10.1063/1.112478",

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T1 - Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

AU - Craciun, V.

AU - Elders, J.

AU - Gardeniers, J.G.E.

AU - Boyd, Ian W.

PY - 1994/12/5

Y1 - 1994/12/5

N2 - This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.

AB - This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.

U2 - 10.1063/1.112478

DO - 10.1063/1.112478

M3 - Article

SN - 0003-6951

VL - 65

SP - 2963

EP - 2965

JO - Applied physics letters

JF - Applied physics letters

IS - 23

ER -

Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

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