Characteristics of high quality ZnO thin films deposited by pulsed laser deposition

V. Craciun, J. Elders, J.G.E. Gardeniers, Ian W. Boyd

Research output: Contribution to journalArticleAcademicpeer-review

271 Citations (Scopus)
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This paper show that under optimized deposition condition, films can be grown having a full width at half maximum (FWHM) value of the (002) x-ray diffraction (XRD) line a factor of 4 smaller than the previously published results using PLD and among the best reported so far by any technique. Under optimized conditions, c-axis oriented ZnO films having a FWHM value of the (002) XRD reflection line less than 15°, electrical resistivities around 5 × 10-2 Ω cm and optical transmittance higher than 85% in the visible region of the spectrum were obtained. Refractive index was around 1.98 and the Eg = 3.26 eV, values characteristic of very high quality ZnO thin films.
Original languageEnglish
Pages (from-to)2963-2965
Number of pages3
JournalApplied physics letters
Issue number23
Publication statusPublished - 5 Dec 1994


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