Characteristics of Separated-Gate JFETs

L.K. Nanver, E.J.G. Goudena

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
9 Downloads (Pure)

Abstract

In the subthreshold region of JFETs a reach-through diode is formed between the top and bottom gates. This has consequences for the application of separated-gate JFETs.

Original languageEnglish
Pages (from-to)1244-1246
Number of pages3
JournalElectronics letters
Volume22
Issue number23
DOIs
Publication statusPublished - 1 Jan 1986
Externally publishedYes

Keywords

  • FETs
  • Junction structures
  • Semiconductor devices and materials

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