Abstract
In the subthreshold region of JFETs a reach-through diode is formed between the top and bottom gates. This has consequences for the application of separated-gate JFETs.
| Original language | English |
|---|---|
| Pages (from-to) | 1244-1246 |
| Number of pages | 3 |
| Journal | Electronics letters |
| Volume | 22 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1 Jan 1986 |
| Externally published | Yes |
Keywords
- FETs
- Junction structures
- Semiconductor devices and materials