Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer

Quentin Coulaud; Erwan Cadiou; Marco Romanelli; Mehdi Alouini; Dawson B. Bonneville; Carlos E. Osornio-Martinez; Sonia M. Garcia-Blanco; Ivo Hegeman; Ronald Dekker

doi:10.1109/MWP62612.2024.10736307

Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer

Quentin Coulaud, Erwan Cadiou, Marco Romanelli, Mehdi Alouini, Dawson B. Bonneville, Carlos E. Osornio-Martinez, Sonia M. Garcia-Blanco, Ivo Hegeman, Ronald Dekker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

This paper presents our recent developments on optical amplification in photonic chips that were developed as part of the European project OPHELLIA (On-chip PHotonics Erbium-doped Laser for LIdar Applications). A photonic chip, integrating an optical amplifier based on Al₂O₃:Er³⁺ doped with $1.5\times 10^{26}$ ions/m' over a length of 7 cm, and Si₃N₄ multiplexers, is shown to have an internal net gain of 20 dB on the active section and an on-chip gain of 4.5 dB at the chip output for a signal at 1550 nm. These results demonstrate the potential of this technology for developing high-performance integrated optical amplifiers.

Original language	English
Title of host publication	2024 International Topical Meeting on Microwave Photonics, MWP 2024
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	9798350375398
DOIs	https://doi.org/10.1109/MWP62612.2024.10736307
Publication status	Published - 4 Nov 2024
Event	2024 International Topical Meeting on Microwave Photonics, MWP 2024 - Pisa, Italy Duration: 17 Sept 2024 → 20 Sept 2024

Conference

Conference	2024 International Topical Meeting on Microwave Photonics, MWP 2024
Abbreviated title	MWP 2024
Country/Territory	Italy
City	Pisa
Period	17/09/24 → 20/09/24

Keywords

2025 OA procedure
integration
multilayer
photonic integrated circuits
erbium doped alumina waveguide amplifier

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10.1109/MWP62612.2024.10736307

Characterization_and_Packaging_of_Erbium-Doped_Alumina_Waveguide_Amplifier_on_a_Silicon_Nitride_LayerFinal published version, 764 KBLicence: Taverne

Cite this

Coulaud, Q., Cadiou, E., Romanelli, M., Alouini, M., Bonneville, D. B., Osornio-Martinez, C. E., Garcia-Blanco, S. M., Hegeman, I., & Dekker, R. (2024). Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer. In 2024 International Topical Meeting on Microwave Photonics, MWP 2024 IEEE. https://doi.org/10.1109/MWP62612.2024.10736307

@inproceedings{81b2d9f62128446bb070f048c0e0f249,

title = "Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer",

abstract = "This paper presents our recent developments on optical amplification in photonic chips that were developed as part of the European project OPHELLIA (On-chip PHotonics Erbium-doped Laser for LIdar Applications). A photonic chip, integrating an optical amplifier based on Al2O3:Er3+ doped with $1.5\times 10^{26}$ ions/m' over a length of 7 cm, and Si3N4 multiplexers, is shown to have an internal net gain of 20 dB on the active section and an on-chip gain of 4.5 dB at the chip output for a signal at 1550 nm. These results demonstrate the potential of this technology for developing high-performance integrated optical amplifiers.",

keywords = "2025 OA procedure, integration, multilayer, photonic integrated circuits, erbium doped alumina waveguide amplifier",

author = "Quentin Coulaud and Erwan Cadiou and Marco Romanelli and Mehdi Alouini and Bonneville, {Dawson B.} and Osornio-Martinez, {Carlos E.} and Garcia-Blanco, {Sonia M.} and Ivo Hegeman and Ronald Dekker",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 International Topical Meeting on Microwave Photonics, MWP 2024, MWP 2024 ; Conference date: 17-09-2024 Through 20-09-2024",

year = "2024",

month = nov,

day = "4",

doi = "10.1109/MWP62612.2024.10736307",

language = "English",

booktitle = "2024 International Topical Meeting on Microwave Photonics, MWP 2024",

publisher = "IEEE",

address = "United States",

}

Coulaud, Q, Cadiou, E, Romanelli, M, Alouini, M, Bonneville, DB , Osornio-Martinez, CE , Garcia-Blanco, SM, Hegeman, I & Dekker, R 2024, Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer. in 2024 International Topical Meeting on Microwave Photonics, MWP 2024. IEEE, 2024 International Topical Meeting on Microwave Photonics, MWP 2024, Pisa, Italy, 17/09/24. https://doi.org/10.1109/MWP62612.2024.10736307

TY - GEN

T1 - Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer

AU - Coulaud, Quentin

AU - Cadiou, Erwan

AU - Romanelli, Marco

AU - Alouini, Mehdi

AU - Bonneville, Dawson B.

AU - Osornio-Martinez, Carlos E.

AU - Garcia-Blanco, Sonia M.

AU - Hegeman, Ivo

AU - Dekker, Ronald

PY - 2024/11/4

Y1 - 2024/11/4

N2 - This paper presents our recent developments on optical amplification in photonic chips that were developed as part of the European project OPHELLIA (On-chip PHotonics Erbium-doped Laser for LIdar Applications). A photonic chip, integrating an optical amplifier based on Al2O3:Er3+ doped with $1.5\times 10^{26}$ ions/m' over a length of 7 cm, and Si3N4 multiplexers, is shown to have an internal net gain of 20 dB on the active section and an on-chip gain of 4.5 dB at the chip output for a signal at 1550 nm. These results demonstrate the potential of this technology for developing high-performance integrated optical amplifiers.

AB - This paper presents our recent developments on optical amplification in photonic chips that were developed as part of the European project OPHELLIA (On-chip PHotonics Erbium-doped Laser for LIdar Applications). A photonic chip, integrating an optical amplifier based on Al2O3:Er3+ doped with $1.5\times 10^{26}$ ions/m' over a length of 7 cm, and Si3N4 multiplexers, is shown to have an internal net gain of 20 dB on the active section and an on-chip gain of 4.5 dB at the chip output for a signal at 1550 nm. These results demonstrate the potential of this technology for developing high-performance integrated optical amplifiers.

KW - 2025 OA procedure

KW - integration

KW - multilayer

KW - photonic integrated circuits

KW - erbium doped alumina waveguide amplifier

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U2 - 10.1109/MWP62612.2024.10736307

DO - 10.1109/MWP62612.2024.10736307

M3 - Conference contribution

AN - SCOPUS:85210871320

BT - 2024 International Topical Meeting on Microwave Photonics, MWP 2024

PB - IEEE

T2 - 2024 International Topical Meeting on Microwave Photonics, MWP 2024

Y2 - 17 September 2024 through 20 September 2024

ER -

Characterization and Packaging of Erbium-Doped Alumina Waveguide Amplifier on a Silicon Nitride Layer

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