Characterization of amorphous boron layers as diffusion barrier for pure aluminium

A. Šakić*, V. Jovanović, P. Maleki, T. L.M. Scholtes, S. Milosavljević, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)

Abstract

A deposited boron layer is investigated as a diffusion barrier between Al and Si. The doping reaction of diborane B2H6 on Si(100) substrates forms an ultra-shallow p+-doped region and amorphous boron layer, the barrier properties of which are tested at different thicknesses. Experimental data obtained from extensive microscopy analyses are used to asses the topography and chemical properties of the silicon/boron surface when in contact with pure aluminium. In this study it is demonstrated that the normally observed spiking behaviour of Al on Si can be prevented and a perfect, spike- and precipitate-free interface can be achieved.

Original languageEnglish
Title of host publicationMIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings
Pages26-29
Number of pages4
Publication statusPublished - 13 Sep 2010
Externally publishedYes
Event33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010 - Opatija, Croatia
Duration: 24 May 201028 May 2010

Conference

Conference33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010
Abbreviated titleMIPRO 2010
CountryCroatia
CityOpatija
Period24/05/1028/05/10

Fingerprint Dive into the research topics of 'Characterization of amorphous boron layers as diffusion barrier for pure aluminium'. Together they form a unique fingerprint.

Cite this