Characterization of amorphous boron layers as diffusion barrier for pure aluminium

A. Šakić; V. Jovanović; P. Maleki; T. L.M. Scholtes; S. Milosavljević; L. K. Nanver

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

A. Šakić^*, V. Jovanović, P. Maleki, T. L.M. Scholtes, S. Milosavljević, L. K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

A deposited boron layer is investigated as a diffusion barrier between Al and Si. The doping reaction of diborane B₂H₆ on Si(100) substrates forms an ultra-shallow p⁺-doped region and amorphous boron layer, the barrier properties of which are tested at different thicknesses. Experimental data obtained from extensive microscopy analyses are used to asses the topography and chemical properties of the silicon/boron surface when in contact with pure aluminium. In this study it is demonstrated that the normally observed spiking behaviour of Al on Si can be prevented and a perfect, spike- and precipitate-free interface can be achieved.

Original language	English
Title of host publication	MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings
Pages	26-29
Number of pages	4
Publication status	Published - 13 Sept 2010
Externally published	Yes
Event	33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010 - Opatija, Croatia Duration: 24 May 2010 → 28 May 2010

Conference

Conference	33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010
Abbreviated title	MIPRO 2010
Country/Territory	Croatia
City	Opatija
Period	24/05/10 → 28/05/10

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Šakić, A., Jovanović, V., Maleki, P., Scholtes, T. L. M., Milosavljević, S., & Nanver, L. K. (2010). Characterization of amorphous boron layers as diffusion barrier for pure aluminium. In MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings (pp. 26-29). Article 5533699 https://ieeexplore.ieee.org/document/5533699

@inproceedings{f1b32767093f41cf9f9ecff84ee9b49e,

title = "Characterization of amorphous boron layers as diffusion barrier for pure aluminium",

abstract = "A deposited boron layer is investigated as a diffusion barrier between Al and Si. The doping reaction of diborane B2H6 on Si(100) substrates forms an ultra-shallow p+-doped region and amorphous boron layer, the barrier properties of which are tested at different thicknesses. Experimental data obtained from extensive microscopy analyses are used to asses the topography and chemical properties of the silicon/boron surface when in contact with pure aluminium. In this study it is demonstrated that the normally observed spiking behaviour of Al on Si can be prevented and a perfect, spike- and precipitate-free interface can be achieved.",

author = "A. {\v S}aki{\'c} and V. Jovanovi{\'c} and P. Maleki and Scholtes, {T. L.M.} and S. Milosavljevi{\'c} and Nanver, {L. K.}",

year = "2010",

month = sep,

day = "13",

language = "English",

isbn = "9789532330502",

pages = "26--29",

booktitle = "MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings",

note = "33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010, MIPRO 2010 ; Conference date: 24-05-2010 Through 28-05-2010",

}

Šakić, A, Jovanović, V, Maleki, P, Scholtes, TLM, Milosavljević, S & Nanver, LK 2010, Characterization of amorphous boron layers as diffusion barrier for pure aluminium. in MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings., 5533699, pp. 26-29, 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010, Opatija, Croatia, 24/05/10. <https://ieeexplore.ieee.org/document/5533699>

Characterization of amorphous boron layers as diffusion barrier for pure aluminium. / Šakić, A.; Jovanović, V.; Maleki, P. et al.
MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings. 2010. p. 26-29 5533699.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Characterization of amorphous boron layers as diffusion barrier for pure aluminium

AU - Šakić, A.

AU - Jovanović, V.

AU - Maleki, P.

AU - Scholtes, T. L.M.

AU - Milosavljević, S.

AU - Nanver, L. K.

PY - 2010/9/13

Y1 - 2010/9/13

N2 - A deposited boron layer is investigated as a diffusion barrier between Al and Si. The doping reaction of diborane B2H6 on Si(100) substrates forms an ultra-shallow p+-doped region and amorphous boron layer, the barrier properties of which are tested at different thicknesses. Experimental data obtained from extensive microscopy analyses are used to asses the topography and chemical properties of the silicon/boron surface when in contact with pure aluminium. In this study it is demonstrated that the normally observed spiking behaviour of Al on Si can be prevented and a perfect, spike- and precipitate-free interface can be achieved.

AB - A deposited boron layer is investigated as a diffusion barrier between Al and Si. The doping reaction of diborane B2H6 on Si(100) substrates forms an ultra-shallow p+-doped region and amorphous boron layer, the barrier properties of which are tested at different thicknesses. Experimental data obtained from extensive microscopy analyses are used to asses the topography and chemical properties of the silicon/boron surface when in contact with pure aluminium. In this study it is demonstrated that the normally observed spiking behaviour of Al on Si can be prevented and a perfect, spike- and precipitate-free interface can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=77956355628&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77956355628

SN - 9789532330502

SP - 26

EP - 29

BT - MIPRO 2010 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, Proceedings

T2 - 33rd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2010

Y2 - 24 May 2010 through 28 May 2010

ER -

Characterization of amorphous boron layers as diffusion barrier for pure aluminium

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