Characterization of dielectric charging in RF MEMS

R.W. Herfst; H.G.A. Huizing; P.G. Steeneken; Jurriaan Schmitz

Characterization of dielectric charging in RF MEMS

R.W. Herfst, H.G.A. Huizing, P.G. Steeneken, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.

Original language	Undefined
Title of host publication	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	11-14
Number of pages	4
ISBN (Print)	90-73461-50-2
Publication status	Published - Nov 2005
Event	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 8

Publication series

Name
Publisher	STW Technology Foundation

Workshop

Workshop	8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

METIS-225623
SC-CICC: Characterization of IC Components
charging
EWI-15515
Reliability
RF MEMS
Dielectric
IR-67718

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15515/01/herfst.pdf

Cite this

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title = "Characterization of dielectric charging in RF MEMS",

abstract = "Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.",

keywords = "METIS-225623, SC-CICC: Characterization of IC Components, charging, EWI-15515, Reliability, RF MEMS, Dielectric, IR-67718",

author = "R.W. Herfst and H.G.A. Huizing and P.G. Steeneken and Jurriaan Schmitz",

year = "2005",

month = nov,

language = "Undefined",

isbn = "90-73461-50-2",

publisher = "STW",

pages = "11--14",

booktitle = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005)",

note = "8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 ; Conference date: 17-11-2005 Through 18-11-2005",

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Herfst, RW, Huizing, HGA, Steeneken, PG & Schmitz, J 2005, Characterization of dielectric charging in RF MEMS. in 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005). STW, Utrecht, The Netherlands, pp. 11-14, 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, Veldhoven, Netherlands, 17/11/05. <http://eprints.eemcs.utwente.nl/secure2/15515/01/herfst.pdf>

TY - GEN

T1 - Characterization of dielectric charging in RF MEMS

AU - Herfst, R.W.

AU - Huizing, H.G.A.

AU - Steeneken, P.G.

AU - Schmitz, Jurriaan

N1 - Conference code: 8

PY - 2005/11

Y1 - 2005/11

N2 - Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.

AB - Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.

KW - METIS-225623

KW - SC-CICC: Characterization of IC Components

KW - charging

KW - EWI-15515

KW - Reliability

KW - RF MEMS

KW - Dielectric

KW - IR-67718

M3 - Conference contribution

SN - 90-73461-50-2

SP - 11

EP - 14

BT - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005)

PB - STW

CY - Utrecht, The Netherlands

T2 - 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005

Y2 - 17 November 2005 through 18 November 2005

ER -