Characterization of dielectric charging in RF MEMS

R.W. Herfst, H.G.A. Huizing, P.G. Steeneken, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.
    Original languageUndefined
    Title of host publication8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages11-14
    Number of pages4
    ISBN (Print)90-73461-50-2
    Publication statusPublished - Nov 2005
    Event8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005 - Veldhoven, Netherlands
    Duration: 17 Nov 200518 Nov 2005
    Conference number: 8

    Publication series

    Name
    PublisherSTW Technology Foundation

    Workshop

    Workshop8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period17/11/0518/11/05

    Keywords

    • METIS-225623
    • SC-CICC: Characterization of IC Components
    • charging
    • EWI-15515
    • Reliability
    • RF MEMS
    • Dielectric
    • IR-67718

    Cite this

    Herfst, R. W., Huizing, H. G. A., Steeneken, P. G., & Schmitz, J. (2005). Characterization of dielectric charging in RF MEMS. In 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005) (pp. 11-14). Utrecht, The Netherlands: STW.