Characterization of dielectric charging in RF MEMS capacitive switches

R.W. Herfst, H.G.A. Huizing, P.G. Steeneken, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

61 Citations (Scopus)
277 Downloads (Pure)

Abstract

RF MEMS capacitive switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by reliability concerns: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. We present a new way to characterize charge injection. By stressing the dielectric with electric fields on the order of 1 MV/cm, we inject charge in the dielectric, and use a new method to measure the effects it has on the C-V curve. Instead of measuring the change in the pull-in voltage, this method measures the change in the voltage at which the capacitance is minimal. This way, no extra charge is injected during the measurement of the amount of injected charge, which reduces the effect it has on the tested switches, so that the effect of the intentionally induced stress voltage is not obscured by the measurement method.
Original languageUndefined
Title of host publicationProceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS)
Place of PublicationAustin, USA
PublisherIEEE
Pages133-136
Number of pages4
ISBN (Print)1-4244-0167-4
DOIs
Publication statusPublished - 6 Mar 2006
Event19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States
Duration: 6 Mar 20069 Mar 2006
Conference number: 19
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog06.html

Publication series

Name
PublisherIEEE
Volume133-6, 2006

Conference

Conference19th International Conference on Microelectronic Test Structures, ICMTS 2006
Abbreviated titleICMTS
CountryUnited States
CityAustin
Period6/03/069/03/06
Internet address

Keywords

  • SC-CICC: Characterization of IC Components
  • METIS-231046
  • EWI-8062
  • IR-66583

Cite this

Herfst, R. W., Huizing, H. G. A., Steeneken, P. G., & Schmitz, J. (2006). Characterization of dielectric charging in RF MEMS capacitive switches. In Proceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS) (pp. 133-136). [10.1109/ICMTS.2006.1614290] Austin, USA: IEEE. https://doi.org/10.1109/ICMTS.2006.1614290
Herfst, R.W. ; Huizing, H.G.A. ; Steeneken, P.G. ; Schmitz, Jurriaan. / Characterization of dielectric charging in RF MEMS capacitive switches. Proceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS). Austin, USA : IEEE, 2006. pp. 133-136
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abstract = "RF MEMS capacitive switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by reliability concerns: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. We present a new way to characterize charge injection. By stressing the dielectric with electric fields on the order of 1 MV/cm, we inject charge in the dielectric, and use a new method to measure the effects it has on the C-V curve. Instead of measuring the change in the pull-in voltage, this method measures the change in the voltage at which the capacitance is minimal. This way, no extra charge is injected during the measurement of the amount of injected charge, which reduces the effect it has on the tested switches, so that the effect of the intentionally induced stress voltage is not obscured by the measurement method.",
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Herfst, RW, Huizing, HGA, Steeneken, PG & Schmitz, J 2006, Characterization of dielectric charging in RF MEMS capacitive switches. in Proceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS)., 10.1109/ICMTS.2006.1614290, IEEE, Austin, USA, pp. 133-136, 19th International Conference on Microelectronic Test Structures, ICMTS 2006, Austin, United States, 6/03/06. https://doi.org/10.1109/ICMTS.2006.1614290

Characterization of dielectric charging in RF MEMS capacitive switches. / Herfst, R.W.; Huizing, H.G.A.; Steeneken, P.G.; Schmitz, Jurriaan.

Proceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS). Austin, USA : IEEE, 2006. p. 133-136 10.1109/ICMTS.2006.1614290.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - RF MEMS capacitive switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by reliability concerns: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. We present a new way to characterize charge injection. By stressing the dielectric with electric fields on the order of 1 MV/cm, we inject charge in the dielectric, and use a new method to measure the effects it has on the C-V curve. Instead of measuring the change in the pull-in voltage, this method measures the change in the voltage at which the capacitance is minimal. This way, no extra charge is injected during the measurement of the amount of injected charge, which reduces the effect it has on the tested switches, so that the effect of the intentionally induced stress voltage is not obscured by the measurement method.

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Herfst RW, Huizing HGA, Steeneken PG, Schmitz J. Characterization of dielectric charging in RF MEMS capacitive switches. In Proceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS). Austin, USA: IEEE. 2006. p. 133-136. 10.1109/ICMTS.2006.1614290 https://doi.org/10.1109/ICMTS.2006.1614290