Characterization of dielectric charging in RF MEMS capacitive switches

R.W. Herfst, H.G.A. Huizing, P.G. Steeneken, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    68 Citations (Scopus)
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    RF MEMS capacitive switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by reliability concerns: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. We present a new way to characterize charge injection. By stressing the dielectric with electric fields on the order of 1 MV/cm, we inject charge in the dielectric, and use a new method to measure the effects it has on the C-V curve. Instead of measuring the change in the pull-in voltage, this method measures the change in the voltage at which the capacitance is minimal. This way, no extra charge is injected during the measurement of the amount of injected charge, which reduces the effect it has on the tested switches, so that the effect of the intentionally induced stress voltage is not obscured by the measurement method.
    Original languageUndefined
    Title of host publicationProceedings of the 2006 International Conference on Microelectronic Test Structures (ICMTS)
    Place of PublicationAustin, USA
    Number of pages4
    ISBN (Print)1-4244-0167-4
    Publication statusPublished - 6 Mar 2006
    Event19th International Conference on Microelectronic Test Structures, ICMTS 2006 - Austin, United States
    Duration: 6 Mar 20069 Mar 2006
    Conference number: 19

    Publication series

    Volume133-6, 2006


    Conference19th International Conference on Microelectronic Test Structures, ICMTS 2006
    Abbreviated titleICMTS
    Country/TerritoryUnited States
    Internet address


    • SC-CICC: Characterization of IC Components
    • METIS-231046
    • EWI-8062
    • IR-66583

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