Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

Duc Minh Nguyen, H. Nazeer, K. Karakaya, P.V.S. Pham Van So, Ruud Johannes Antonius Steenwelle, Jan M. Dekkers, Leon Abelmann, David H.A. Blank, Augustinus J.H.M. Rijnders

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Abstract

This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.
Original languageUndefined
Article number085022
Pages (from-to)085022-085032
Number of pages11
JournalJournal of micromechanics and microengineering
Volume20
Issue number8
DOIs
Publication statusPublished - 12 Jul 2010

Keywords

  • EWI-18728
  • IR-72972
  • METIS-281522
  • TST-uSPAM: micro Scanning Probe Array Memory
  • Electronics and devices Surfaces
  • interfaces and thin films Nanoscale science and low-D systems
  • TST-SMI: Formerly in EWI-SMI

Cite this

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title = "Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers",
abstract = "This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.",
keywords = "EWI-18728, IR-72972, METIS-281522, TST-uSPAM: micro Scanning Probe Array Memory, Electronics and devices Surfaces, interfaces and thin films Nanoscale science and low-D systems, TST-SMI: Formerly in EWI-SMI",
author = "Nguyen, {Duc Minh} and H. Nazeer and K. Karakaya and {Pham Van So}, P.V.S. and Steenwelle, {Ruud Johannes Antonius} and Dekkers, {Jan M.} and Leon Abelmann and Blank, {David H.A.} and Rijnders, {Augustinus J.H.M.}",
note = "10.1088/0960-1317/20/8/085022",
year = "2010",
month = "7",
day = "12",
doi = "10.1088/0960-1317/20/8/085022",
language = "Undefined",
volume = "20",
pages = "085022--085032",
journal = "Journal of micromechanics and microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
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Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers. / Nguyen, Duc Minh; Nazeer, H.; Karakaya, K.; Pham Van So, P.V.S.; Steenwelle, Ruud Johannes Antonius; Dekkers, Jan M.; Abelmann, Leon; Blank, David H.A.; Rijnders, Augustinus J.H.M.

In: Journal of micromechanics and microengineering, Vol. 20, No. 8, 085022, 12.07.2010, p. 085022-085032.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

AU - Nguyen, Duc Minh

AU - Nazeer, H.

AU - Karakaya, K.

AU - Pham Van So, P.V.S.

AU - Steenwelle, Ruud Johannes Antonius

AU - Dekkers, Jan M.

AU - Abelmann, Leon

AU - Blank, David H.A.

AU - Rijnders, Augustinus J.H.M.

N1 - 10.1088/0960-1317/20/8/085022

PY - 2010/7/12

Y1 - 2010/7/12

N2 - This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.

AB - This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.

KW - EWI-18728

KW - IR-72972

KW - METIS-281522

KW - TST-uSPAM: micro Scanning Probe Array Memory

KW - Electronics and devices Surfaces

KW - interfaces and thin films Nanoscale science and low-D systems

KW - TST-SMI: Formerly in EWI-SMI

U2 - 10.1088/0960-1317/20/8/085022

DO - 10.1088/0960-1317/20/8/085022

M3 - Article

VL - 20

SP - 85022

EP - 85032

JO - Journal of micromechanics and microengineering

JF - Journal of micromechanics and microengineering

SN - 0960-1317

IS - 8

M1 - 085022

ER -