Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

Duc Minh Nguyen, H. Nazeer, K. Karakaya, P.V.S. Pham Van So, Ruud Johannes Antonius Steenwelle, Jan M. Dekkers, Leon Abelmann, David H.A. Blank, Augustinus J.H.M. Rijnders

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This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.
Original languageUndefined
Article number085022
Pages (from-to)085022-085032
Number of pages11
JournalJournal of micromechanics and microengineering
Issue number8
Publication statusPublished - 12 Jul 2010


  • EWI-18728
  • IR-72972
  • METIS-281522
  • TST-uSPAM: micro Scanning Probe Array Memory
  • Electronics and devices Surfaces
  • interfaces and thin films Nanoscale science and low-D systems
  • TST-SMI: Formerly in EWI-SMI

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