Characterization of Green Laser Crystallized GeSi Thin Films

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.
    Original languageUndefined
    Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011
    Number of pages6
    Publication statusPublished - 2011
    EventMRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States
    Duration: 25 Apr 201129 Apr 2011

    Publication series

    NameMRS online proceedings


    ConferenceMRS Spring Meeting 2011
    Country/TerritoryUnited States
    CitySan Francisco


    • laser annealing
    • Grain size
    • Chemical vapor deposition (CVD) (deposition)

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