Characterization of Green Laser Crystallized GeSi Thin Films

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

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    Abstract

    Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.
    Original languageUndefined
    Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011
    Pagesa06-04
    Number of pages6
    DOIs
    Publication statusPublished - 2011
    EventMRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States
    Duration: 25 Apr 201129 Apr 2011

    Publication series

    NameMRS online proceedings
    Volume1321

    Conference

    ConferenceMRS Spring Meeting 2011
    CountryUnited States
    CitySan Francisco
    Period25/04/1129/04/11

    Keywords

    • laser annealing
    • Grain size
    • Chemical vapor deposition (CVD) (deposition)

    Cite this

    Rangarajan, B., Brunets, I., Oesterlin, P., Kovalgin, A. Y., & Schmitz, J. (2011). Characterization of Green Laser Crystallized GeSi Thin Films. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011 (pp. a06-04). (MRS online proceedings; Vol. 1321). https://doi.org/10.1557/opl.2011.807