Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.
|Name||MRS online proceedings|
|Conference||MRS Spring Meeting 2011|
|Period||25/04/11 → 29/04/11|
- laser annealing
- Grain size
- Chemical vapor deposition (CVD) (deposition)