Characterization of Green Laser Crystallized GeSi Thin Films

B. Rangarajan; I. Brunets; Peter Oesterlin; Alexeij Y. Kovalgin; Jurriaan Schmitz

doi:10.1557/opl.2011.807

Characterization of Green Laser Crystallized GeSi Thin Films

B. Rangarajan, I. Brunets, Peter Oesterlin, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

Original language	Undefined
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011
Pages	a06-04
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2011.807
Publication status	Published - 2011
Event	MRS Spring Meeting 2011: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - San Francisco, United States Duration: 25 Apr 2011 → 29 Apr 2011

Publication series

Name	MRS online proceedings
Volume	1321

Conference

Conference	MRS Spring Meeting 2011
Country/Territory	United States
City	San Francisco
Period	25/04/11 → 29/04/11

Keywords

laser annealing
Grain size
Chemical vapor deposition (CVD) (deposition)

Access to Document

10.1557/opl.2011.807

Cite this

@inproceedings{dea92c3ab9d94ac7af49625ea39af48f,

title = "Characterization of Green Laser Crystallized GeSi Thin Films",

abstract = "Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.",

keywords = "laser annealing, Grain size, Chemical vapor deposition (CVD) (deposition)",

author = "B. Rangarajan and I. Brunets and Peter Oesterlin and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

year = "2011",

doi = "10.1557/opl.2011.807",

language = "Undefined",

series = "MRS online proceedings",

pages = "a06--04",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011",

note = "MRS Spring Meeting 2011 ; Conference date: 25-04-2011 Through 29-04-2011",

}

Rangarajan, B, Brunets, I, Oesterlin, P, Kovalgin, AY & Schmitz, J 2011, Characterization of Green Laser Crystallized GeSi Thin Films. in Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011. MRS online proceedings, vol. 1321, pp. a06-04, MRS Spring Meeting 2011, San Francisco, California, United States, 25/04/11. https://doi.org/10.1557/opl.2011.807

TY - GEN

T1 - Characterization of Green Laser Crystallized GeSi Thin Films

AU - Rangarajan, B.

AU - Brunets, I.

AU - Oesterlin, Peter

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

PY - 2011

Y1 - 2011

N2 - Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

AB - Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

KW - laser annealing

KW - Grain size

KW - Chemical vapor deposition (CVD) (deposition)

U2 - 10.1557/opl.2011.807

DO - 10.1557/opl.2011.807

M3 - Conference contribution

T3 - MRS online proceedings

SP - a06-04

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2011

T2 - MRS Spring Meeting 2011

Y2 - 25 April 2011 through 29 April 2011

ER -