Characterization of low energy boron implants and electrical results of submicron PMOS transistors

E.J.H. Collart, A.J. Murrell, G. De Cock, M.A. Foad, J. Schmitz, J.P. van Zijl, J.G.M. van Berkum

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Abstract

Low energy boron implants between 200 eV and 10 keV have been characterized for the effect of channelling and of pre-amorphization on the as-implanted profiles. Suitable rapid thermal anneal conditions for a shallow drain formation compatible with a 0.18 μm CMOS process were determined. One of these conditions was then used to fabricate PMOS transistors with shallow drain extensions using a 0.18 μm flow chart. Transistor characteristics such as threshold voltage, junction leakage and asymmetry were then measured as a function of implanted species and energy, and of gate length.

Original languageEnglish
Title of host publicationIon implantation technology-98
Subtitle of host publication1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998
EditorsJ. Matsuo, G. Takaoka, I. Yamada
PublisherIEEE Canada
Pages905-908
Number of pages4
Volume2
ISBN (Print)0-7803-4538-X, 0-7803-4539-8
DOIs
Publication statusPublished - 1 Dec 1999
Externally publishedYes
Event1998 International Conference on Ion Implantation Technology, IIT 1998 - Kyoto, Japan
Duration: 22 Jun 199826 Jun 1998

Conference

Conference1998 International Conference on Ion Implantation Technology, IIT 1998
Abbreviated titleITT
CountryJapan
CityKyoto
Period22/06/9826/06/98

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