Characterization of low energy boron implants and electrical results of submicron PMOS transistors

E.J.H. Collart; A.J. Murrell; G. De Cock; M.A. Foad; J. Schmitz; J.P. van Zijl; J.G.M. van Berkum

doi:10.1109/IIT.1998.813815

Characterization of low energy boron implants and electrical results of submicron PMOS transistors

E.J.H. Collart, A.J. Murrell, G. De Cock, M.A. Foad, J. Schmitz, J.P. van Zijl, J.G.M. van Berkum

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Low energy boron implants between 200 eV and 10 keV have been characterized for the effect of channelling and of pre-amorphization on the as-implanted profiles. Suitable rapid thermal anneal conditions for a shallow drain formation compatible with a 0.18 μm CMOS process were determined. One of these conditions was then used to fabricate PMOS transistors with shallow drain extensions using a 0.18 μm flow chart. Transistor characteristics such as threshold voltage, junction leakage and asymmetry were then measured as a function of implanted species and energy, and of gate length.

Original language	English
Title of host publication	Ion implantation technology-98
Subtitle of host publication	1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998
Editors	J. Matsuo, G. Takaoka, I. Yamada
Publisher	IEEE
Pages	905-908
Number of pages	4
Volume	2
ISBN (Print)	0-7803-4538-X, 0-7803-4539-8
DOIs	https://doi.org/10.1109/IIT.1998.813815
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	1998 International Conference on Ion Implantation Technology, IIT 1998 - Kyoto, Japan Duration: 22 Jun 1998 → 26 Jun 1998

Conference

Conference	1998 International Conference on Ion Implantation Technology, IIT 1998
Abbreviated title	ITT
Country/Territory	Japan
City	Kyoto
Period	22/06/98 → 26/06/98

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10.1109/IIT.1998.813815

Characterisation of low energy boron implants and electrical resltus of submicron PMOS transistorsSubmitted version, 370 KBLicence: Unspecified

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Collart, E. J. H., Murrell, A. J., De Cock, G., Foad, M. A., Schmitz, J., van Zijl, J. P., & van Berkum, J. G. M. (1999). Characterization of low energy boron implants and electrical results of submicron PMOS transistors. In J. Matsuo, G. Takaoka, & I. Yamada (Eds.), Ion implantation technology-98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998 (Vol. 2, pp. 905-908). IEEE. https://doi.org/10.1109/IIT.1998.813815

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title = "Characterization of low energy boron implants and electrical results of submicron PMOS transistors",

abstract = "Low energy boron implants between 200 eV and 10 keV have been characterized for the effect of channelling and of pre-amorphization on the as-implanted profiles. Suitable rapid thermal anneal conditions for a shallow drain formation compatible with a 0.18 μm CMOS process were determined. One of these conditions was then used to fabricate PMOS transistors with shallow drain extensions using a 0.18 μm flow chart. Transistor characteristics such as threshold voltage, junction leakage and asymmetry were then measured as a function of implanted species and energy, and of gate length.",

author = "E.J.H. Collart and A.J. Murrell and {De Cock}, G. and M.A. Foad and J. Schmitz and {van Zijl}, J.P. and {van Berkum}, J.G.M.",

year = "1999",

month = dec,

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doi = "10.1109/IIT.1998.813815",

language = "English",

isbn = "0-7803-4538-X",

volume = "2",

pages = "905--908",

editor = "J. Matsuo and G. Takaoka and I. Yamada",

booktitle = "Ion implantation technology-98",

publisher = "IEEE",

address = "United States",

note = "1998 International Conference on Ion Implantation Technology, IIT 1998, ITT ; Conference date: 22-06-1998 Through 26-06-1998",

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Collart, EJH, Murrell, AJ, De Cock, G, Foad, MA, Schmitz, J, van Zijl, JP & van Berkum, JGM 1999, Characterization of low energy boron implants and electrical results of submicron PMOS transistors. in J Matsuo, G Takaoka & I Yamada (eds), Ion implantation technology-98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998. vol. 2, IEEE, pp. 905-908, 1998 International Conference on Ion Implantation Technology, IIT 1998, Kyoto, Japan, 22/06/98. https://doi.org/10.1109/IIT.1998.813815

Characterization of low energy boron implants and electrical results of submicron PMOS transistors. / Collart, E.J.H.; Murrell, A.J.; De Cock, G. et al.
Ion implantation technology-98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998. ed. / J. Matsuo; G. Takaoka; I. Yamada. Vol. 2 IEEE, 1999. p. 905-908.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AB - Low energy boron implants between 200 eV and 10 keV have been characterized for the effect of channelling and of pre-amorphization on the as-implanted profiles. Suitable rapid thermal anneal conditions for a shallow drain formation compatible with a 0.18 μm CMOS process were determined. One of these conditions was then used to fabricate PMOS transistors with shallow drain extensions using a 0.18 μm flow chart. Transistor characteristics such as threshold voltage, junction leakage and asymmetry were then measured as a function of implanted species and energy, and of gate length.

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Collart EJH, Murrell AJ, De Cock G, Foad MA, Schmitz J, van Zijl JP et al. Characterization of low energy boron implants and electrical results of submicron PMOS transistors. In Matsuo J, Takaoka G, Yamada I, editors, Ion implantation technology-98: 1998 International Conference on Ion Implantation Technology proceedings, Kyoto, Japan, June 22-26, 1998. Vol. 2. IEEE. 1999. p. 905-908 doi: 10.1109/IIT.1998.813815

Characterization of low energy boron implants and electrical results of submicron PMOS transistors

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