Characterization of Mo/Si multilayer growth on stepped topographies

A.J.R. van den Boogaard, Eric Louis, E. Zoethout, K.A. Goldberg, Frederik Bijkerk

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Mo/Si multilayer mirrors with nanoscale bilayer thicknesses have been deposited on stepped substrate topographies, using various deposition angles. The multilayer morphology at the step-edge region was studied by cross section transmission electron microscopy. A transition from a continuous- to columnar layer morphology is observed near the step-edge, as a function of the local angle of incidence of the deposition flux. Taking into account the corresponding kinetics and anisotropy in layer growth, a continuum model has been developed to give a detailed description of the height profiles of the individual continuous layers. Complementary optical characterization of the multilayer system using a microscope operating in the extreme ultraviolet wavelength range, revealed that the influence of the step-edge on the planar multilayer structure is restricted to a region within 300 nm from the step-edge.
Original languageEnglish
Article number051803
Pages (from-to)1-9
Number of pages9
JournalJournal of vacuum science and technology. B: Microelectronics and nanometer structures
Volume29
Issue number5
DOIs
Publication statusPublished - 2011

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