5% $B_2H_6/Ar$ and 5% $PH_3/Ar$ were introduced to the plasma enhanced chemical vapor deposition process of silicon oxynitride. The bond configurations and refractive indexes of the boron/phosphorous (B/P) doped layers were characterized by Fourier transform infrared spectroscopy and the prism coupling method, respectively. The effect of annealing on the N-H bonds, which mainly contribute to undesired optical losses around 1500 nm wavelength, has been studied. Compared to undoped samples, significant reduction of N-H bonds was observed in the as-deposited B/P doped layers. The reduction of N-H bonds during annealing was found to depend primarily on the applied temperatures rather than on the duration of the annealing process. Complete elimination of N-H bonds has been achieved by temperature treatment of samples at 70C for 3 hours.
- IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
Swihart, M. T. (Ed.), Sun, F., Sengo, G., Barreca, D. (Ed.), Driessen, A., Adoaitis, R. A. (Ed.), & Worhoff, K. (Ed.) (2009). Characterization of phosphorous and boron doped silicon oxynitride prepared plasma enhanced chemical vapor deposition. ECS transactions, 25(8), 711-718. https://doi.org/10.1149/1.3207659