Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric

R.G. Bankras, J. Holleman, P.H. Woerlee

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002
    Place of PublicationUtrecht, The Netherlands
    PublisherTechnologiestichting STW
    Pages1-4
    Number of pages4
    ISBN (Print)90-73461-33-2
    Publication statusPublished - 27 Nov 2002

    Keywords

    • METIS-207619

    Cite this

    Bankras, R. G., Holleman, J., & Woerlee, P. H. (2002). Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric. In Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002 (pp. 1-4). Utrecht, The Netherlands: Technologiestichting STW.
    Bankras, R.G. ; Holleman, J. ; Woerlee, P.H. / Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric. Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands : Technologiestichting STW, 2002. pp. 1-4
    @inproceedings{299b8fe81a104fdaa6f8613d443bcfec,
    title = "Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric",
    keywords = "METIS-207619",
    author = "R.G. Bankras and J. Holleman and P.H. Woerlee",
    year = "2002",
    month = "11",
    day = "27",
    language = "Undefined",
    isbn = "90-73461-33-2",
    pages = "1--4",
    booktitle = "Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002",
    publisher = "Technologiestichting STW",

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    Bankras, RG, Holleman, J & Woerlee, PH 2002, Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric. in Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Technologiestichting STW, Utrecht, The Netherlands, pp. 1-4.

    Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric. / Bankras, R.G.; Holleman, J.; Woerlee, P.H.

    Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands : Technologiestichting STW, 2002. p. 1-4.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric

    AU - Bankras, R.G.

    AU - Holleman, J.

    AU - Woerlee, P.H.

    PY - 2002/11/27

    Y1 - 2002/11/27

    KW - METIS-207619

    M3 - Conference contribution

    SN - 90-73461-33-2

    SP - 1

    EP - 4

    BT - Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002

    PB - Technologiestichting STW

    CY - Utrecht, The Netherlands

    ER -

    Bankras RG, Holleman J, Woerlee PH. Characterization of Pulsed Laser Deposited AL2 0 3 Gate Dielectric. In Proceedings of 5th Annual Workshop on Semiconductors Advances for Future Electronics SAFE 2002. Utrecht, The Netherlands: Technologiestichting STW. 2002. p. 1-4