Abstract
Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.
Original language | English |
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Title of host publication | ESSDERC 2007 |
Subtitle of host publication | Proceedings of the 37th European Solid State Device Research Conference |
Editors | Doris Schmitt-Landsiedel, Roland Thewes |
Publisher | IEEE Computer Society |
Pages | 354-357 |
Number of pages | 4 |
ISBN (Print) | 1-4244-1123-8, 978-1-4244-1123-8 |
DOIs | |
Publication status | Published - 1 Jan 2008 |
Externally published | Yes |
Event | 37th European Solid-State Device Research Conference, ESSDERC 2007 - TU München, München, Germany Duration: 11 Sep 2007 → 13 Sep 2007 Conference number: 37 |
Publication series
Name | European Solid State Device Research Conference. Proceedings |
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ISSN (Print) | 1930-8876 |
Conference
Conference | 37th European Solid-State Device Research Conference, ESSDERC 2007 |
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Abbreviated title | ESSDERC |
Country/Territory | Germany |
City | München |
Period | 11/09/07 → 13/09/07 |