Characterization of PVD aluminum nitride for heat spreading in RF IC's

L. La Spina*, L.K. Nanver, H. Schellevis, E. Iborra, M. Clement, J. Olivares

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)

Abstract

Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.

Original languageEnglish
Title of host publicationESSDERC 2007
Subtitle of host publicationProceedings of the 37th European Solid State Device Research Conference
EditorsDoris Schmitt-Landsiedel, Roland Thewes
PublisherIEEE Computer Society
Pages354-357
Number of pages4
ISBN (Print)1-4244-1123-8, 978-1-4244-1123-8
DOIs
Publication statusPublished - 1 Jan 2008
Externally publishedYes
Event37th European Solid-State Device Research Conference, ESSDERC 2007 - TU München, München, Germany
Duration: 11 Sep 200713 Sep 2007
Conference number: 37

Publication series

NameEuropean Solid State Device Research Conference. Proceedings
ISSN (Print)1930-8876

Conference

Conference37th European Solid-State Device Research Conference, ESSDERC 2007
Abbreviated titleESSDERC
CountryGermany
CityMünchen
Period11/09/0713/09/07

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