Characterization of PVD aluminum nitride for heat spreading in RF IC's

L. La Spina; L.K. Nanver; H. Schellevis; E. Iborra; M. Clement; J. Olivares

doi:10.1109/ESSDERC.2007.4430951

Characterization of PVD aluminum nitride for heat spreading in RF IC's

L. La Spina^*, L.K. Nanver, H. Schellevis, E. Iborra, M. Clement, J. Olivares

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

5 Citations (Scopus)

Abstract

Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.

Original language	English
Title of host publication	ESSDERC 2007
Subtitle of host publication	Proceedings of the 37th European Solid State Device Research Conference
Editors	Doris Schmitt-Landsiedel, Roland Thewes
Publisher	IEEE Computer Society
Pages	354-357
Number of pages	4
ISBN (Print)	1-4244-1123-8, 978-1-4244-1123-8
DOIs	https://doi.org/10.1109/ESSDERC.2007.4430951
Publication status	Published - 1 Jan 2008
Externally published	Yes
Event	37th European Solid-State Device Research Conference, ESSDERC 2007 - TU München, München, Germany Duration: 11 Sep 2007 → 13 Sep 2007 Conference number: 37

Publication series

Name	European Solid State Device Research Conference. Proceedings
ISSN (Print)	1930-8876

Conference

Conference	37th European Solid-State Device Research Conference, ESSDERC 2007
Abbreviated title	ESSDERC
Country	Germany
City	München
Period	11/09/07 → 13/09/07

Access to Document

10.1109/ESSDERC.2007.4430951

Cite this

La Spina, L., Nanver, L. K., Schellevis, H., Iborra, E., Clement, M., & Olivares, J. (2008). Characterization of PVD aluminum nitride for heat spreading in RF IC's. In D. Schmitt-Landsiedel, & R. Thewes (Eds.), ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference (pp. 354-357). [4430951] (European Solid State Device Research Conference. Proceedings). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430951

La Spina, L. ; Nanver, L.K. ; Schellevis, H. ; Iborra, E. ; Clement, M. ; Olivares, J. / Characterization of PVD aluminum nitride for heat spreading in RF IC's. ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference. editor / Doris Schmitt-Landsiedel ; Roland Thewes. IEEE Computer Society, 2008. pp. 354-357 (European Solid State Device Research Conference. Proceedings).

@inproceedings{c02cf2f5166b4d7f9efa5cd42fed5457,

title = "Characterization of PVD aluminum nitride for heat spreading in RF IC's",

abstract = "Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.",

author = "{La Spina}, L. and L.K. Nanver and H. Schellevis and E. Iborra and M. Clement and J. Olivares",

year = "2008",

month = jan,

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doi = "10.1109/ESSDERC.2007.4430951",

language = "English",

isbn = "1-4244-1123-8",

series = "European Solid State Device Research Conference. Proceedings",

publisher = "IEEE Computer Society",

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editor = "Doris Schmitt-Landsiedel and Roland Thewes",

booktitle = "ESSDERC 2007",

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note = "37th European Solid-State Device Research Conference, ESSDERC 2007, ESSDERC ; Conference date: 11-09-2007 Through 13-09-2007",

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La Spina, L, Nanver, LK, Schellevis, H, Iborra, E, Clement, M & Olivares, J 2008, Characterization of PVD aluminum nitride for heat spreading in RF IC's. in D Schmitt-Landsiedel & R Thewes (eds), ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference., 4430951, European Solid State Device Research Conference. Proceedings, IEEE Computer Society, pp. 354-357, 37th European Solid-State Device Research Conference, ESSDERC 2007, München, Germany, 11/09/07. https://doi.org/10.1109/ESSDERC.2007.4430951

Characterization of PVD aluminum nitride for heat spreading in RF IC's. / La Spina, L.; Nanver, L.K.; Schellevis, H.; Iborra, E.; Clement, M.; Olivares, J.

ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference. ed. / Doris Schmitt-Landsiedel; Roland Thewes. IEEE Computer Society, 2008. p. 354-357 4430951 (European Solid State Device Research Conference. Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Characterization of PVD aluminum nitride for heat spreading in RF IC's

AU - La Spina, L.

AU - Nanver, L.K.

AU - Schellevis, H.

AU - Iborra, E.

AU - Clement, M.

AU - Olivares, J.

N1 - Conference code: 37

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.

AB - Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 μm, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.

U2 - 10.1109/ESSDERC.2007.4430951

DO - 10.1109/ESSDERC.2007.4430951

M3 - Conference contribution

SN - 1-4244-1123-8

SN - 978-1-4244-1123-8

T3 - European Solid State Device Research Conference. Proceedings

SP - 354

EP - 357

BT - ESSDERC 2007

A2 - Schmitt-Landsiedel, Doris

A2 - Thewes, Roland

PB - IEEE Computer Society

T2 - 37th European Solid-State Device Research Conference, ESSDERC 2007

Y2 - 11 September 2007 through 13 September 2007

ER -

La Spina L, Nanver LK, Schellevis H, Iborra E, Clement M, Olivares J. Characterization of PVD aluminum nitride for heat spreading in RF IC's. In Schmitt-Landsiedel D, Thewes R, editors, ESSDERC 2007: Proceedings of the 37th European Solid State Device Research Conference. IEEE Computer Society. 2008. p. 354-357. 4430951. (European Solid State Device Research Conference. Proceedings). https://doi.org/10.1109/ESSDERC.2007.4430951

Characterization of PVD aluminum nitride for heat spreading in RF IC's

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