Characterization of recessed Ohmic contacts to AlGaN/GaN

M. Hajlasz; J.J.T.M. Donkers; S.J. Sque; S.B.S. Heil; Dirk J Gravesteijn; F.J.R. Rietveld; Jurriaan Schmitz

doi:10.1109/ICMTS.2015.7106133

Characterization of recessed Ohmic contacts to AlGaN/GaN

M. Hajlasz, J.J.T.M. Donkers, S.J. Sque, S.B.S. Heil, Dirk J Gravesteijn, F.J.R. Rietveld, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

10 Downloads (Pure)

Abstract

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.

Original language	Undefined
Title of host publication	Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015
Place of Publication	USA
Publisher	IEEE
Pages	158-162
Number of pages	5
ISBN (Print)	978-1-4799-8302-5
DOIs	https://doi.org/10.1109/ICMTS.2015.7106133
Publication status	Published - 23 Mar 2015
Event	28th International Conference on Microelectronic Test Structures, ICMTS 2015 - Hilton Hotel Phoenix, Tempe, United States Duration: 23 Mar 2015 → 26 Mar 2015 Conference number: 28 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

Publication series

Name	Proceedings of the IEEE International Conference on Microelectronic Test Structures
Publisher	IEEE Solid-State Circuits Society
ISSN (Print)	1071-9032

Conference

Conference	28th International Conference on Microelectronic Test Structures, ICMTS 2015
Abbreviated title	ICMTS
Country/Territory	United States
City	Tempe
Period	23/03/15 → 26/03/15
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

Keywords

EWI-26562
METIS-315095
recessed Ohmic contacts
semiconductor heterojunctions
semiconductor-metal boundaries
wide band gap semiconductors
Specific contact resistance
ohmic contacts
gallium compounds
Titanium
test structures
III-V semiconductors
aluminium compounds
IR-98708
Characterization methods
Contact resistance
Aluminium
AlGaN-GaN-Ti-Al
identical sheet resistance

Access to Document

10.1109/ICMTS.2015.7106133

http://eprints.eemcs.utwente.nl/secure2/26562/01/Hajlasz_ICMTS_Phoenix_2015.pdf

Cite this

Hajlasz, M., Donkers, J. J. T. M., Sque, S. J., Heil, S. B. S., Gravesteijn, D. J., Rietveld, F. J. R., & Schmitz, J. (2015). Characterization of recessed Ohmic contacts to AlGaN/GaN. In Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015 (pp. 158-162). (Proceedings of the IEEE International Conference on Microelectronic Test Structures). IEEE. https://doi.org/10.1109/ICMTS.2015.7106133

@inproceedings{efa817053c794f3a923db339c8879d0c,

title = "Characterization of recessed Ohmic contacts to AlGaN/GaN",

abstract = "In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.",

keywords = "EWI-26562, METIS-315095, recessed Ohmic contacts, semiconductor heterojunctions, semiconductor-metal boundaries, wide band gap semiconductors, Specific contact resistance, ohmic contacts, gallium compounds, Titanium, test structures, III-V semiconductors, aluminium compounds, IR-98708, Characterization methods, Contact resistance, Aluminium, AlGaN-GaN-Ti-Al, identical sheet resistance",

author = "M. Hajlasz and J.J.T.M. Donkers and S.J. Sque and S.B.S. Heil and Gravesteijn, {Dirk J} and F.J.R. Rietveld and Jurriaan Schmitz",

note = "eemcs-eprint-26562 ; 28th International Conference on Microelectronic Test Structures, ICMTS 2015 ; Conference date: 23-03-2015 Through 26-03-2015",

year = "2015",

month = mar,

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doi = "10.1109/ICMTS.2015.7106133",

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isbn = "978-1-4799-8302-5",

series = "Proceedings of the IEEE International Conference on Microelectronic Test Structures",

publisher = "IEEE",

pages = "158--162",

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Hajlasz, M, Donkers, JJTM, Sque, SJ, Heil, SBS, Gravesteijn, DJ, Rietveld, FJR & Schmitz, J 2015, Characterization of recessed Ohmic contacts to AlGaN/GaN. in Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015. Proceedings of the IEEE International Conference on Microelectronic Test Structures, IEEE, USA, pp. 158-162, 28th International Conference on Microelectronic Test Structures, ICMTS 2015, Tempe, Arizona, United States, 23/03/15. https://doi.org/10.1109/ICMTS.2015.7106133

Characterization of recessed Ohmic contacts to AlGaN/GaN. / Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J. et al.
Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015. USA: IEEE, 2015. p. 158-162 (Proceedings of the IEEE International Conference on Microelectronic Test Structures).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Characterization of recessed Ohmic contacts to AlGaN/GaN

AU - Hajlasz, M.

AU - Donkers, J.J.T.M.

AU - Sque, S.J.

AU - Heil, S.B.S.

AU - Gravesteijn, Dirk J

AU - Rietveld, F.J.R.

AU - Schmitz, Jurriaan

N1 - Conference code: 28

PY - 2015/3/23

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N2 - In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.

AB - In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.

KW - EWI-26562

KW - METIS-315095

KW - recessed Ohmic contacts

KW - semiconductor heterojunctions

KW - semiconductor-metal boundaries

KW - wide band gap semiconductors

KW - Specific contact resistance

KW - ohmic contacts

KW - gallium compounds

KW - Titanium

KW - test structures

KW - III-V semiconductors

KW - aluminium compounds

KW - IR-98708

KW - Characterization methods

KW - Contact resistance

KW - Aluminium

KW - AlGaN-GaN-Ti-Al

KW - identical sheet resistance

U2 - 10.1109/ICMTS.2015.7106133

DO - 10.1109/ICMTS.2015.7106133

M3 - Conference contribution

SN - 978-1-4799-8302-5

T3 - Proceedings of the IEEE International Conference on Microelectronic Test Structures

SP - 158

EP - 162

BT - Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015

PB - IEEE

CY - USA

T2 - 28th International Conference on Microelectronic Test Structures, ICMTS 2015

Y2 - 23 March 2015 through 26 March 2015

ER -

Hajlasz M, Donkers JJTM, Sque SJ, Heil SBS, Gravesteijn DJ, Rietveld FJR et al. Characterization of recessed Ohmic contacts to AlGaN/GaN. In Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015. USA: IEEE. 2015. p. 158-162. (Proceedings of the IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2015.7106133