Characterization of recessed Ohmic contacts to AlGaN/GaN

M. Hajlasz, J.J.T.M. Donkers, S.J. Sque, S.B.S. Heil, Dirk J Gravesteijn, F.J.R. Rietveld, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)

    Abstract

    In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to 3000 % in the extracted specific contact resistance.
    Original languageUndefined
    Title of host publicationProceedings of the International Conference on Microelectronic Test Structures, ICMTS 2015
    Place of PublicationUSA
    PublisherIEEE Solid-State Circuits Society
    Pages158-162
    Number of pages5
    ISBN (Print)978-1-4799-8302-5
    DOIs
    Publication statusPublished - 23 Mar 2015
    Event28th International Conference on Microelectronic Test Structures, ICMTS 2015 - Hilton Hotel Phoenix, Tempe, United States
    Duration: 23 Mar 201526 Mar 2015
    Conference number: 28
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog15.html

    Publication series

    NameProceedings of the IEEE International Conference on Microelectronic Test Structures
    PublisherIEEE Solid-State Circuits Society
    ISSN (Print)1071-9032

    Conference

    Conference28th International Conference on Microelectronic Test Structures, ICMTS 2015
    Abbreviated titleICMTS
    CountryUnited States
    CityTempe
    Period23/03/1526/03/15
    Internet address

    Keywords

    • EWI-26562
    • METIS-315095
    • recessed Ohmic contacts
    • semiconductor heterojunctions
    • semiconductor-metal boundaries
    • wide band gap semiconductors
    • Specific contact resistance
    • ohmic contacts
    • gallium compounds
    • Titanium
    • test structures
    • III-V semiconductors
    • aluminium compounds
    • IR-98708
    • Characterization methods
    • Contact resistance
    • Aluminium
    • AlGaN-GaN-Ti-Al
    • identical sheet resistance

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