TY - JOUR
T1 - Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD
AU - Boogaard, A.
AU - Kovalgin, Alexeij Y.
AU - Brunets, I.
AU - Aarnink, Antonius A.I.
AU - Holleman, J.
AU - Wolters, Robertus A.M.
AU - Schmitz, Jurriaan
PY - 2007/9/1
Y1 - 2007/9/1
N2 - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality.
We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.
AB - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality.
We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.
KW - SC-ICF: Integrated Circuit Fabrication
KW - Silane
KW - Electrical characterization
KW - PECVD
KW - Silicon dioxide
U2 - 10.1016/j.surfcoat.2007.04.039
DO - 10.1016/j.surfcoat.2007.04.039
M3 - Article
SN - 0257-8972
VL - 201
SP - 8976
EP - 8980
JO - Surface and coatings technology
JF - Surface and coatings technology
IS - WP07-01
ER -