Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

    Research output: Contribution to journalArticleAcademicpeer-review

    19 Citations (Scopus)

    Abstract

    Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality. We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.
    Original languageUndefined
    Article number10.1016/j.surfcoat.2007.04.039
    Pages (from-to)8976-8980
    Number of pages5
    JournalSurface and coatings technology
    Volume201
    Issue numberWP07-01
    DOIs
    Publication statusPublished - 1 Sep 2007

    Keywords

    • EWI-9721
    • SC-ICF: Integrated Circuit Fabrication
    • Silane
    • IR-64005
    • Electrical characterization
    • PECVD
    • METIS-241603
    • Silicon dioxide

    Cite this

    @article{a34c1c684942423690e1d1e6ab2ffc28,
    title = "Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD",
    abstract = "Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality. We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.",
    keywords = "EWI-9721, SC-ICF: Integrated Circuit Fabrication, Silane, IR-64005, Electrical characterization, PECVD, METIS-241603, Silicon dioxide",
    author = "A. Boogaard and Kovalgin, {Alexeij Y.} and I. Brunets and Aarnink, {Antonius A.I.} and J. Holleman and Wolters, {Robertus A.M.} and Jurriaan Schmitz",
    note = "10.1016/j.surfcoat.2007.04.039",
    year = "2007",
    month = "9",
    day = "1",
    doi = "10.1016/j.surfcoat.2007.04.039",
    language = "Undefined",
    volume = "201",
    pages = "8976--8980",
    journal = "Surface and coatings technology",
    issn = "0257-8972",
    publisher = "Elsevier",
    number = "WP07-01",

    }

    Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. / Boogaard, A.; Kovalgin, Alexeij Y.; Brunets, I.; Aarnink, Antonius A.I.; Holleman, J.; Wolters, Robertus A.M.; Schmitz, Jurriaan.

    In: Surface and coatings technology, Vol. 201, No. WP07-01, 10.1016/j.surfcoat.2007.04.039, 01.09.2007, p. 8976-8980.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

    AU - Boogaard, A.

    AU - Kovalgin, Alexeij Y.

    AU - Brunets, I.

    AU - Aarnink, Antonius A.I.

    AU - Holleman, J.

    AU - Wolters, Robertus A.M.

    AU - Schmitz, Jurriaan

    N1 - 10.1016/j.surfcoat.2007.04.039

    PY - 2007/9/1

    Y1 - 2007/9/1

    N2 - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality. We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.

    AB - Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. Chemical modeling of our plasma indicated an increased fraction of SiH3 radicals at 6 Pa (compared to SiH2, SiH, and Si species), while at 1 Pa their relative contribution on film growth should be much smaller. Layer growth from SiH3 radicals would result in better dielectric quality. We found that the films contained a high amount of positive charge and exhibited large leakage currents at 1 Pa, while films with lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and 3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry. These results were consistent with chemical modeling.

    KW - EWI-9721

    KW - SC-ICF: Integrated Circuit Fabrication

    KW - Silane

    KW - IR-64005

    KW - Electrical characterization

    KW - PECVD

    KW - METIS-241603

    KW - Silicon dioxide

    U2 - 10.1016/j.surfcoat.2007.04.039

    DO - 10.1016/j.surfcoat.2007.04.039

    M3 - Article

    VL - 201

    SP - 8976

    EP - 8980

    JO - Surface and coatings technology

    JF - Surface and coatings technology

    SN - 0257-8972

    IS - WP07-01

    M1 - 10.1016/j.surfcoat.2007.04.039

    ER -