Characterization of thermally treated PECVD SiON layers

M.G. Hussein, Kerstin Worhoff, C.G.H. Roeloffzen, L.T.H. Hilderink, R.M. de Ridder, A. Driessen

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    Abstract

    PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.
    Original languageEnglish
    Title of host publicationProceeding IEEE / LEOS
    EditorsH. Thienpont, F. Berghmans, J. Danckaert, L. Desmet
    Place of PublicationBrussel, Belgium
    PublisherVUB Press
    Pages265-268
    Number of pages4
    ISBN (Print)90-5487247-0
    Publication statusPublished - 3 Dec 2001
    EventAnnual Meeting IEEE/LEOS Benelux Chapter 2001 - Brussels, Belgium
    Duration: 2 Dec 20013 Dec 2001

    Conference

    ConferenceAnnual Meeting IEEE/LEOS Benelux Chapter 2001
    CountryBelgium
    CityBrussels
    Period2/12/013/12/01

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