Abstract
PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.
Original language | English |
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Title of host publication | Proceeding IEEE / LEOS |
Editors | H. Thienpont, F. Berghmans, J. Danckaert, L. Desmet |
Place of Publication | Brussel, Belgium |
Publisher | VUB Press |
Pages | 265-268 |
Number of pages | 4 |
ISBN (Print) | 90-5487247-0 |
Publication status | Published - 3 Dec 2001 |
Event | Annual Meeting IEEE/LEOS Benelux Chapter 2001 - Brussels, Belgium Duration: 2 Dec 2001 → 3 Dec 2001 |
Conference
Conference | Annual Meeting IEEE/LEOS Benelux Chapter 2001 |
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Country | Belgium |
City | Brussels |
Period | 2/12/01 → 3/12/01 |