Characterization of thermally treated PECVD SiON layers

M.G. Hussein; Kerstin Worhoff; C.G.H. Roeloffzen; L.T.H. Hilderink; R.M. de Ridder; A. Driessen

Characterization of thermally treated PECVD SiON layers

M.G. Hussein, Kerstin Worhoff, C.G.H. Roeloffzen, L.T.H. Hilderink, R.M. de Ridder, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.

Original language	English
Title of host publication	Proceeding IEEE / LEOS
Editors	H. Thienpont, F. Berghmans, J. Danckaert, L. Desmet
Place of Publication	Brussel, Belgium
Publisher	VUB Press
Pages	265-268
Number of pages	4
ISBN (Print)	90-5487247-0
Publication status	Published - 3 Dec 2001
Event	Annual Meeting IEEE/LEOS Benelux Chapter 2001 - Brussels, Belgium Duration: 2 Dec 2001 → 3 Dec 2001

Conference

Conference	Annual Meeting IEEE/LEOS Benelux Chapter 2001
Country	Belgium
City	Brussels
Period	2/12/01 → 3/12/01

Cite this

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title = "Characterization of thermally treated PECVD SiON layers",

abstract = "PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.",

author = "M.G. Hussein and Kerstin Worhoff and C.G.H. Roeloffzen and L.T.H. Hilderink and {de Ridder}, R.M. and A. Driessen",

year = "2001",

month = dec,

day = "3",

language = "English",

isbn = "90-5487247-0",

pages = "265--268",

editor = "H. Thienpont and F. Berghmans and J. Danckaert and L. Desmet",

booktitle = "Proceeding IEEE / LEOS",

publisher = "VUB Press",

note = "Annual Meeting IEEE/LEOS Benelux Chapter 2001 ; Conference date: 02-12-2001 Through 03-12-2001",

}

Characterization of thermally treated PECVD SiON layers. / Hussein, M.G.; Worhoff, Kerstin; Roeloffzen, C.G.H.; Hilderink, L.T.H.; de Ridder, R.M.; Driessen, A.

Proceeding IEEE / LEOS. ed. / H. Thienpont; F. Berghmans; J. Danckaert; L. Desmet. Brussel, Belgium : VUB Press, 2001. p. 265-268.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Characterization of thermally treated PECVD SiON layers

AU - Hussein, M.G.

AU - Worhoff, Kerstin

AU - Roeloffzen, C.G.H.

AU - Hilderink, L.T.H.

AU - de Ridder, R.M.

AU - Driessen, A.

PY - 2001/12/3

Y1 - 2001/12/3

N2 - PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.

AB - PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.

M3 - Conference contribution

SN - 90-5487247-0

SP - 265

EP - 268

BT - Proceeding IEEE / LEOS

A2 - Thienpont, H.

A2 - Berghmans, F.

A2 - Danckaert, J.

A2 - Desmet, L.

PB - VUB Press

CY - Brussel, Belgium

T2 - Annual Meeting IEEE/LEOS Benelux Chapter 2001

Y2 - 2 December 2001 through 3 December 2001

ER -

Characterization of thermally treated PECVD SiON layers

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