Characterization of thin alumina films prepared by metal-organic chemical vapour deposition (MOCVD) by high-resolution SEM, (AR)XPS and AES depth profiling

Thin alumina films deposited by metal-organic chemical vapour deposition (MOCVD) on AISI 304 substrate have been analyzed using the combination of Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES) and Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Both the surface and the alumina/substrate interface region have been analyzed in terms of chemical composition and elemental distribution. Only OH-groups (bounded as AlO(OH):boehmite) have been found as an impurity in the surface region of the oxide film. No carbon was detected. Due to higher temperature deposition, the concentration of OH-groups decreased. After annealing, the oxide/substrate interface changes as a result of chromium penetration into the alumina matrix. Carbon impurities have been detected on both delaminated and annealed alumina film surfaces. Also small amounts of sulfate groups as well as Ca and C impurities have been found on delaminated alumina film after prolonged high-temperature annealing.