On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.
Penning De Vries, R. G. M., & Wallinga, H. (1985). Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model. Physica B+C, 129(1-3), 301-305. https://doi.org/10.1016/0378-4363(85)90590-X