Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model

R.G.M. Penning De Vries, Hans Wallinga

Research output: Contribution to journalArticleAcademic

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Abstract

On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.
Original languageUndefined
Pages (from-to)301-305
JournalPhysica B+C
Volume129
Issue number1-3
DOIs
Publication statusPublished - 1985

Keywords

  • IR-69448

Cite this

Penning De Vries, R.G.M. ; Wallinga, Hans. / Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model. In: Physica B+C. 1985 ; Vol. 129, No. 1-3. pp. 301-305.
@article{167c8d86d3e44b9697912fbfdd95204b,
title = "Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model",
abstract = "On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.",
keywords = "IR-69448",
author = "{Penning De Vries}, R.G.M. and Hans Wallinga",
year = "1985",
doi = "10.1016/0378-4363(85)90590-X",
language = "Undefined",
volume = "129",
pages = "301--305",
journal = "Physica B+C",
issn = "0378-4363",
publisher = "North-Holland Publ Co",
number = "1-3",

}

Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model. / Penning De Vries, R.G.M.; Wallinga, Hans.

In: Physica B+C, Vol. 129, No. 1-3, 1985, p. 301-305.

Research output: Contribution to journalArticleAcademic

TY - JOUR

T1 - Charge loss experiments in surface channel CCD's explained by the McWhorter interface states model

AU - Penning De Vries, R.G.M.

AU - Wallinga, Hans

PY - 1985

Y1 - 1985

N2 - On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.

AB - On the basis of the McWhorter interface states model the CCD charge loss is derived as a function of bias charge, signal charge and channel width. As opposed to existing models, the charge loss is now attributed to interface states in the entire gate area, even for high bias charge levels. Experimental confirmation of the novel model is presented.

KW - IR-69448

U2 - 10.1016/0378-4363(85)90590-X

DO - 10.1016/0378-4363(85)90590-X

M3 - Article

VL - 129

SP - 301

EP - 305

JO - Physica B+C

JF - Physica B+C

SN - 0378-4363

IS - 1-3

ER -