Charge noise in liquid-gated single-wall carbon nanotube transistors

Jaan Männik, Iddo Heller, Anne M. Janssens, Serge G. Lemay, Cees Dekker*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

46 Citations (Scopus)

Abstract

The noise properties of single-walled carbon nanotube transistors (SWNT-FETs) are essential for the performance of electronic circuits and sensors. Here, we investigate the mechanism responsible for the low-frequency noise in liquid-gated SWNT-FETs and its scaling with the length of the nanotube channel down to the nanometer scale. We show that the gate dependence of the noise amplitude provides strong evidence for a recently proposed charge-noise model. We find that the power of the charge noise scales as the inverse of the channel length of the SWNT-FET. Our measurements also show that surprisingly the ionic strength of the surrounding electrolyte has a minimal effect on the noise magnitude in SWNT-FETs.

Original languageEnglish
Pages (from-to)685-688
Number of pages4
JournalNano letters
Volume8
Issue number2
DOIs
Publication statusPublished - Feb 2008
Externally publishedYes

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