Charge plasma diode - a novel device concept

B. Rajasekharan; Raymond Josephus Engelbart Hueting; Cora Salm; T. Hoang; Jurriaan Schmitz

Charge plasma diode - a novel device concept

B. Rajasekharan, Raymond Josephus Engelbart Hueting, Cora Salm, T. Hoang, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.

Original language	Undefined
Title of host publication	Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	576-579
Number of pages	4
ISBN (Print)	978-90-73461-56-7
Publication status	Published - 27 Nov 2008
Event	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 11

Publication series

Name
Publisher	Technology Foundation STW
Number	WoTUG-31

Workshop

Workshop	11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/08 → 28/11/08

Keywords

SC-ICF: Integrated Circuit Fabrication
METIS-255002
IR-62611
EWI-14611

Access to Document

http://eprints.eemcs.utwente.nl/secure2/14611/01/rajasekharan.pdf

Cite this

@inproceedings{7d79ddaa163642ec855a031f4ef32e22,

title = "Charge plasma diode - a novel device concept",

abstract = "We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.",

keywords = "SC-ICF: Integrated Circuit Fabrication, METIS-255002, IR-62611, EWI-14611",

author = "B. Rajasekharan and Hueting, {Raymond Josephus Engelbart} and Cora Salm and T. Hoang and Jurriaan Schmitz",

year = "2008",

month = nov,

day = "27",

language = "Undefined",

isbn = "978-90-73461-56-7",

publisher = "STW",

number = "WoTUG-31",

pages = "576--579",

booktitle = "Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)",

note = "11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 ; Conference date: 27-11-2008 Through 28-11-2008",

}

Rajasekharan, B, Hueting, RJE , Salm, C, Hoang, T & Schmitz, J 2008, Charge plasma diode - a novel device concept. in Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). STW, Utrecht, The Netherlands, pp. 576-579, 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, Veldhoven, Netherlands, 27/11/08. <http://eprints.eemcs.utwente.nl/secure2/14611/01/rajasekharan.pdf>

Charge plasma diode - a novel device concept. / Rajasekharan, B.; Hueting, Raymond Josephus Engelbart ; Salm, Cora et al.
Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008). Utrecht, The Netherlands: STW, 2008. p. 576-579.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Charge plasma diode - a novel device concept

AU - Rajasekharan, B.

AU - Hueting, Raymond Josephus Engelbart

AU - Salm, Cora

AU - Hoang, T.

AU - Schmitz, Jurriaan

N1 - Conference code: 11

PY - 2008/11/27

Y1 - 2008/11/27

N2 - We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.

AB - We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.

KW - SC-ICF: Integrated Circuit Fabrication

KW - METIS-255002

KW - IR-62611

KW - EWI-14611

M3 - Conference contribution

SN - 978-90-73461-56-7

SP - 576

EP - 579

BT - Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)

PB - STW

CY - Utrecht, The Netherlands

T2 - 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008

Y2 - 27 November 2008 through 28 November 2008

ER -