Charge plasma diode - a novel device concept

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    Abstract

    We propose a new device concept called charge plasma (CP) diode [1]. The diodes are with metal/silicided contacts of different workfunctions and thin intrinsic region in between. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e. a CP p-n diode is formed. The main advantages of these devices are low temperature budget and no dopant implantation is necessary in thin silicon layers [2,3,4]. We begin by discussing some important results from our silicon p-i-n diodes before moving on to the novel device concept of CP diodes.
    Original languageUndefined
    Title of host publicationProceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008)
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages576-579
    Number of pages4
    ISBN (Print)978-90-73461-56-7
    Publication statusPublished - 27 Nov 2008
    Event11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008 - Veldhoven, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 11

    Publication series

    Name
    PublisherTechnology Foundation STW
    NumberWoTUG-31

    Workshop

    Workshop11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0828/11/08

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • METIS-255002
    • IR-62611
    • EWI-14611

    Cite this

    Rajasekharan, B., Hueting, R. J. E., Salm, C., Hoang, T., & Schmitz, J. (2008). Charge plasma diode - a novel device concept. In Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008) (pp. 576-579). Utrecht, The Netherlands: STW.