Charge Pumping at radio Frequencies: Methodology, Trap Response and Application

G.T. Sasse, J. Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    8 Citations (Scopus)

    Abstract

    The charge pumping (CP) technique is known for its highaccuracy of determining the interface state density on MOS devices [1]. With reducing oxide thickness, the tunneling current can dramatically disturb the accuracy of the obtained CP results [2]. In this paper we discuss the applicability of the RF CP technique for extracting the interface state density on these dielectrics. We present an improved measurement approach, new data, and an improved model for the description of the RF CP response of fast interface states.
    Original languageEnglish
    Title of host publication2006 IEEE International Reliability Physics Symposium proceedings
    Subtitle of host publication44th annual : San Jose, California, March, 26-30, 2006
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages627-628
    Number of pages2
    ISBN (Print)0-7803-9498-4
    DOIs
    Publication statusPublished - 30 Mar 2006
    Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, United States
    Duration: 30 Mar 200630 Mar 2006
    Conference number: 44

    Conference

    Conference44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
    Abbreviated titleIRPS
    CountryUnited States
    CitySan Jose
    Period30/03/0630/03/06

    Keywords

    • RF
    • Tunneling
    • Trap response
    • Charge Pumping
    • SC-ICRY: Integrated Circuit Reliability and Yield

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  • Cite this

    Sasse, G. T., & Schmitz, J. (2006). Charge Pumping at radio Frequencies: Methodology, Trap Response and Application. In 2006 IEEE International Reliability Physics Symposium proceedings: 44th annual : San Jose, California, March, 26-30, 2006 (pp. 627-628). Piscataway, NJ: IEEE. https://doi.org/10.1109/RELPHY.2006.251295