Charge pumping at radio frequencies: [MOSFET device interface state density measurement]

G.T. Sasse; H. de Vries; J. Schmitz

doi:10.1109/ICMTS.2005.1452273

Charge pumping at radio frequencies: [MOSFET device interface state density measurement]

G.T. Sasse, H. de Vries, J. Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

19 Downloads (Pure)

Abstract

In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

Original language	English
Title of host publication	ICMTS 2005
Subtitle of host publication	proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	229-233
Number of pages	5
ISBN (Print)	0-7803-8855-0
DOIs	https://doi.org/10.1109/ICMTS.2005.1452273
Publication status	Published - Apr 2005
Event	18th International Conference on Microelectronic Test Structures, ICMTS 2005 - De Valk, Leuven, Belgium Duration: 4 Apr 2005 → 7 Apr 2005 Conference number: 18

Publication series

Name	Proceedings International Conference on Microelectronic Test Structures
Publisher	IEEE
Volume	2005
ISSN (Print)	1071-9032
ISSN (Electronic)	2158-1029

Conference

Conference	18th International Conference on Microelectronic Test Structures, ICMTS 2005
Abbreviated title	ICMTS
Country/Territory	Belgium
City	Leuven
Period	4/04/05 → 7/04/05

Keywords

Electric current measurement
Dielectric thin films
Leakage currents
Interface states
MOSFET

Access to Document

10.1109/ICMTS.2005.1452273

Cite this

Sasse, G. T., de Vries, H., & Schmitz, J. (2005). Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium (pp. 229-233). (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005). IEEE. https://doi.org/10.1109/ICMTS.2005.1452273

Sasse, G.T. ; de Vries, H. ; Schmitz, J. / Charge pumping at radio frequencies : [MOSFET device interface state density measurement]. ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ : IEEE, 2005. pp. 229-233 (Proceedings International Conference on Microelectronic Test Structures).

@inproceedings{edaf1d399e5546d0a255083f47c0211f,

title = "Charge pumping at radio frequencies: [MOSFET device interface state density measurement]",

abstract = "In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.",

keywords = "Electric current measurement, Dielectric thin films, Leakage currents, Interface states, MOSFET",

author = "G.T. Sasse and {de Vries}, H. and J. Schmitz",

year = "2005",

month = apr,

doi = "10.1109/ICMTS.2005.1452273",

language = "English",

isbn = "0-7803-8855-0",

series = "Proceedings International Conference on Microelectronic Test Structures",

publisher = "IEEE",

pages = "229--233",

booktitle = "ICMTS 2005",

address = "United States",

note = "18th International Conference on Microelectronic Test Structures, ICMTS 2005, ICMTS ; Conference date: 04-04-2005 Through 07-04-2005",

}

Sasse, GT, de Vries, H & Schmitz, J 2005, Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. in ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Proceedings International Conference on Microelectronic Test Structures, vol. 2005, IEEE, Piscataway, NJ, pp. 229-233, 18th International Conference on Microelectronic Test Structures, ICMTS 2005, Leuven, Belgium, 4/04/05. https://doi.org/10.1109/ICMTS.2005.1452273

Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. / Sasse, G.T.; de Vries, H.; Schmitz, J.
ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ: IEEE, 2005. p. 229-233 (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Charge pumping at radio frequencies

T2 - 18th International Conference on Microelectronic Test Structures, ICMTS 2005

AU - Sasse, G.T.

AU - de Vries, H.

AU - Schmitz, J.

N1 - Conference code: 18

PY - 2005/4

Y1 - 2005/4

N2 - In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

AB - In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

KW - Electric current measurement

KW - Dielectric thin films

KW - Leakage currents

KW - Interface states

KW - MOSFET

UR - http://www.scopus.com/inward/record.url?scp=27644571878&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2005.1452273

DO - 10.1109/ICMTS.2005.1452273

M3 - Conference contribution

SN - 0-7803-8855-0

T3 - Proceedings International Conference on Microelectronic Test Structures

SP - 229

EP - 233

BT - ICMTS 2005

PB - IEEE

CY - Piscataway, NJ

Y2 - 4 April 2005 through 7 April 2005

ER -

Sasse GT, de Vries H , Schmitz J. Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ: IEEE. 2005. p. 229-233. (Proceedings International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2005.1452273

Charge pumping at radio frequencies: [MOSFET device interface state density measurement]

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this