Charge pumping at radio frequencies: [MOSFET device interface state density measurement]

G.T. Sasse, H. de Vries, J. Schmitz

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
9 Downloads (Pure)

Abstract

In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.
Original languageEnglish
Title of host publicationICMTS 2005
Subtitle of host publicationproceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages229-233
Number of pages5
ISBN (Print)0-7803-8855-0
DOIs
Publication statusPublished - Apr 2005
Event18th International Conference on Microelectronic Test Structures, ICMTS 2005 - De Valk, Leuven, Belgium
Duration: 4 Apr 20057 Apr 2005
Conference number: 18

Publication series

NameProceedings International Conference on Microelectronic Test Structures
PublisherIEEE
Volume2005
ISSN (Print)1071-9032
ISSN (Electronic)2158-1029

Conference

Conference18th International Conference on Microelectronic Test Structures, ICMTS 2005
Abbreviated titleICMTS
CountryBelgium
CityLeuven
Period4/04/057/04/05

Fingerprint

Electron density measurement
Interface states
MOSFET devices
Pumps
Leakage currents

Keywords

  • Electric current measurement
  • Dielectric thin films
  • Leakage currents
  • Interface states
  • MOSFET

Cite this

Sasse, G. T., de Vries, H., & Schmitz, J. (2005). Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium (pp. 229-233). (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005). Piscataway, NJ: IEEE. https://doi.org/10.1109/ICMTS.2005.1452273
Sasse, G.T. ; de Vries, H. ; Schmitz, J. / Charge pumping at radio frequencies : [MOSFET device interface state density measurement]. ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ : IEEE, 2005. pp. 229-233 (Proceedings International Conference on Microelectronic Test Structures).
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abstract = "In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.",
keywords = "Electric current measurement, Dielectric thin films, Leakage currents, Interface states, MOSFET",
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Sasse, GT, de Vries, H & Schmitz, J 2005, Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. in ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Proceedings International Conference on Microelectronic Test Structures, vol. 2005, IEEE, Piscataway, NJ, pp. 229-233, 18th International Conference on Microelectronic Test Structures, ICMTS 2005, Leuven, Belgium, 4/04/05. https://doi.org/10.1109/ICMTS.2005.1452273

Charge pumping at radio frequencies : [MOSFET device interface state density measurement]. / Sasse, G.T.; de Vries, H.; Schmitz, J.

ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ : IEEE, 2005. p. 229-233 (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

AB - In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

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Sasse GT, de Vries H, Schmitz J. Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ: IEEE. 2005. p. 229-233. (Proceedings International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2005.1452273