Charge pumping at radio frequencies: [MOSFET device interface state density measurement]

G.T. Sasse, H. de Vries, J. Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    9 Downloads (Pure)

    Abstract

    In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.
    Original languageEnglish
    Title of host publicationICMTS 2005
    Subtitle of host publicationproceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages229-233
    Number of pages5
    ISBN (Print)0-7803-8855-0
    DOIs
    Publication statusPublished - Apr 2005
    Event18th International Conference on Microelectronic Test Structures, ICMTS 2005 - De Valk, Leuven, Belgium
    Duration: 4 Apr 20057 Apr 2005
    Conference number: 18

    Publication series

    NameProceedings International Conference on Microelectronic Test Structures
    PublisherIEEE
    Volume2005
    ISSN (Print)1071-9032
    ISSN (Electronic)2158-1029

    Conference

    Conference18th International Conference on Microelectronic Test Structures, ICMTS 2005
    Abbreviated titleICMTS
    CountryBelgium
    CityLeuven
    Period4/04/057/04/05

    Fingerprint

    Electron density measurement
    Interface states
    MOSFET devices
    Pumps
    Leakage currents

    Keywords

    • Electric current measurement
    • Dielectric thin films
    • Leakage currents
    • Interface states
    • MOSFET

    Cite this

    Sasse, G. T., de Vries, H., & Schmitz, J. (2005). Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium (pp. 229-233). (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005). Piscataway, NJ: IEEE. https://doi.org/10.1109/ICMTS.2005.1452273
    Sasse, G.T. ; de Vries, H. ; Schmitz, J. / Charge pumping at radio frequencies : [MOSFET device interface state density measurement]. ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ : IEEE, 2005. pp. 229-233 (Proceedings International Conference on Microelectronic Test Structures).
    @inproceedings{edaf1d399e5546d0a255083f47c0211f,
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    abstract = "In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.",
    keywords = "Electric current measurement, Dielectric thin films, Leakage currents, Interface states, MOSFET",
    author = "G.T. Sasse and {de Vries}, H. and J. Schmitz",
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    Sasse, GT, de Vries, H & Schmitz, J 2005, Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. in ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Proceedings International Conference on Microelectronic Test Structures, vol. 2005, IEEE, Piscataway, NJ, pp. 229-233, 18th International Conference on Microelectronic Test Structures, ICMTS 2005, Leuven, Belgium, 4/04/05. https://doi.org/10.1109/ICMTS.2005.1452273

    Charge pumping at radio frequencies : [MOSFET device interface state density measurement]. / Sasse, G.T.; de Vries, H.; Schmitz, J.

    ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ : IEEE, 2005. p. 229-233 (Proceedings International Conference on Microelectronic Test Structures; Vol. 2005).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    AB - In this work, for the first time, charge pump results are shown that are obtained at frequencies in the GHz range. A comparison is made with charge pump results at lower frequencies. A very good agreement is seen between the low frequency charge pump data and the RF charge pump data. Measurement results on dielectrics that suffer from a high leakage current show that a charge pump current can be measured at frequencies above 500 MHz. At lower frequencies the charge pump current is completely overwhelmed by the leakage current and therefore normal charge pump currents are not usable for measuring the interface state density. This indicates that the RF charge pump technique is very promising for measuring the interface state density on ultra thin dielectrics.

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    Sasse GT, de Vries H, Schmitz J. Charge pumping at radio frequencies: [MOSFET device interface state density measurement]. In ICMTS 2005: proceedings of the 2005 International Conference on Microelectronic Test Structures, April 4-7, 2005, De Valk, Tiensestraat 41, Leuven, Belgium. Piscataway, NJ: IEEE. 2005. p. 229-233. (Proceedings International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2005.1452273