Charge transport after hard breakdown in gate oxides

T. Bearda, P.H. Woerlee, Hans Wallinga, M.M. Heyns

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    Abstract

    We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.
    Original languageUndefined
    Article number10.1143/JJAP.41.2431
    Pages (from-to)2431-2436
    Number of pages6
    JournalJapanese journal of applied physics
    Volume41
    Issue number4B
    DOIs
    Publication statusPublished - 1 Apr 2002

    Keywords

    • point contact
    • breakdown spot
    • spreading resistance
    • Hard Breakdown
    • IR-67748
    • Diode
    • EWI-15573

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