Charge transport after hard breakdown in gate oxides

T. Bearda; P.H. Woerlee; H. Wallinga; M.M. Heyns

doi:10.1143/JJAP.41.2431

Charge transport after hard breakdown in gate oxides

T. Bearda, P.H. Woerlee, H. Wallinga, M.M. Heyns

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Abstract

We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.

Original language	English
Pages (from-to)	2431-2436
Number of pages	6
Journal	Japanese journal of applied physics
Volume	41
Issue number	4B
DOIs	https://doi.org/10.1143/JJAP.41.2431
Publication status	Published - 1 Apr 2002

Keywords

Point contact
Breakdown spot
Spreading resistance
Hard breakdown
Diode

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10.1143/JJAP.41.2431

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title = "Charge transport after hard breakdown in gate oxides",

abstract = "We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.",

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author = "T. Bearda and P.H. Woerlee and H. Wallinga and M.M. Heyns",

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AU - Bearda, T.

AU - Woerlee, P.H.

AU - Wallinga, H.

AU - Heyns, M.M.

N1 - Special Issue: Solid State Devices & Materials Part 1, No. 4B, April 2002

PY - 2002/4/1

Y1 - 2002/4/1

N2 - We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.

AB - We show measurement results and simulations of current–voltage characteristics of Metal-Oxide-Semiconductor capacitors after hard breakdown. The devices exhibit either point contact or diode behaviour, depending on electrode and substrate characteristics and the bias regime. The charge transport characteristics were reproduced in device simulations, including the dependence on the gate dimensions and breakdown spot size.

KW - Point contact

KW - Breakdown spot

KW - Spreading resistance

KW - Hard breakdown

KW - Diode

U2 - 10.1143/JJAP.41.2431

DO - 10.1143/JJAP.41.2431

M3 - Article

SN - 0021-4922

VL - 41

SP - 2431

EP - 2436

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 4B

ER -

Charge transport after hard breakdown in gate oxides

Abstract

Keywords

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