Charge transport in nanoscale vertical organic semiconductor pillar devices

Janine G.E. Wilbers; Bojian Xu; Peter A. Bobbert; Machiel P. de Jong; Wilfred G. van der Wiel

doi:10.1038/srep41171

Charge transport in nanoscale vertical organic semiconductor pillar devices

Janine G.E. Wilbers, Bojian Xu, Peter A. Bobbert, Machiel P. de Jong, Wilfred G. van der Wiel

Nano Electronics

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Abstract

We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

Original language	English
Article number	41171
Number of pages	8
Journal	Scientific reports
Volume	7
DOIs	https://doi.org/10.1038/srep41171
Publication status	Published - 24 Jan 2017

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10.1038/srep41171Licence: CC BY

Wilbers2017chargeFinal published version, 962 KBLicence: CC BY

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title = "Charge transport in nanoscale vertical organic semiconductor pillar devices",

abstract = "We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.",

author = "Wilbers, {Janine G.E.} and Bojian Xu and Bobbert, {Peter A.} and {de Jong}, {Machiel P.} and {van der Wiel}, {Wilfred G.}",

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AU - Wilbers, Janine G.E.

AU - Xu, Bojian

AU - Bobbert, Peter A.

AU - de Jong, Machiel P.

AU - van der Wiel, Wilfred G.

PY - 2017/1/24

Y1 - 2017/1/24

N2 - We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

AB - We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

U2 - 10.1038/srep41171

DO - 10.1038/srep41171

M3 - Article

SN - 2045-2322

VL - 7

JO - Scientific reports

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Charge transport in nanoscale vertical organic semiconductor pillar devices

Abstract

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