Charge transport in nanoscale vertical organic semiconductor pillar devices

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.
Original languageEnglish
Article number41171
Number of pages8
JournalScientific reports
Volume7
DOIs
Publication statusPublished - 24 Jan 2017

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organic semiconductors
semiconductor devices
high current
current density
transistors
injection
electric potential

Keywords

  • IR-103352
  • EWI-27700

Cite this

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title = "Charge transport in nanoscale vertical organic semiconductor pillar devices",
abstract = "We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.",
keywords = "IR-103352, EWI-27700",
author = "J.G.E. Wilbers and Bojian Xu and Bobbert, {Peter A.} and {de Jong}, {Machiel Pieter} and {van der Wiel}, {Wilfred Gerard}",
year = "2017",
month = "1",
day = "24",
doi = "10.1038/srep41171",
language = "English",
volume = "7",
journal = "Scientific reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Charge transport in nanoscale vertical organic semiconductor pillar devices. / Wilbers, J.G.E.; Xu, Bojian; Bobbert, Peter A.; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard.

In: Scientific reports, Vol. 7, 41171, 24.01.2017.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Charge transport in nanoscale vertical organic semiconductor pillar devices

AU - Wilbers, J.G.E.

AU - Xu, Bojian

AU - Bobbert, Peter A.

AU - de Jong, Machiel Pieter

AU - van der Wiel, Wilfred Gerard

PY - 2017/1/24

Y1 - 2017/1/24

N2 - We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

AB - We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene) (P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to 106A/m2). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.

KW - IR-103352

KW - EWI-27700

U2 - 10.1038/srep41171

DO - 10.1038/srep41171

M3 - Article

VL - 7

JO - Scientific reports

JF - Scientific reports

SN - 2045-2322

M1 - 41171

ER -