Charging damage in floating metal-insulator-metal capacitors

Jan Ackaert; Zhichun Wang; E. De Backer; P. Coppens

doi:10.1109/PPID.2001.929993

Charging damage in floating metal-insulator-metal capacitors

Jan Ackaert, Zhichun Wang, E. De Backer, P. Coppens

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation

Original language	English
Title of host publication	6th International Symposium on Plasma Process-Induced Damage 2001
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	120-123
Number of pages	4
ISBN (Print)	0-9651577-5-X
DOIs	https://doi.org/10.1109/PPID.2001.929993
Publication status	Published - 7 Aug 2002
Event	6th International Symposium on Plasma Process-Induced Damage 2001 - Monterey, United States Duration: 13 May 2001 → 15 May 2001 Conference number: 6

Conference

Conference	6th International Symposium on Plasma Process-Induced Damage 2001
Country/Territory	United States
City	Monterey
Period	13/05/01 → 15/05/01

Keywords

METIS-113958
EWI-15624
IR-67507

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10.1109/PPID.2001.929993

Cite this

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title = "Charging damage in floating metal-insulator-metal capacitors",

abstract = "In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation",

keywords = "METIS-113958, EWI-15624, IR-67507",

author = "Jan Ackaert and Zhichun Wang and {De Backer}, E. and P. Coppens",

year = "2002",

month = aug,

day = "7",

doi = "10.1109/PPID.2001.929993",

language = "English",

isbn = "0-9651577-5-X",

pages = "120--123",

booktitle = "6th International Symposium on Plasma Process-Induced Damage 2001",

publisher = "IEEE",

address = "United States",

note = "6th International Symposium on Plasma Process-Induced Damage 2001 ; Conference date: 13-05-2001 Through 15-05-2001",

}

Ackaert, J, Wang, Z, De Backer, E & Coppens, P 2002, Charging damage in floating metal-insulator-metal capacitors. in 6th International Symposium on Plasma Process-Induced Damage 2001. IEEE, Piscataway, NJ, pp. 120-123, 6th International Symposium on Plasma Process-Induced Damage 2001, Monterey, California, United States, 13/05/01. https://doi.org/10.1109/PPID.2001.929993

TY - GEN

T1 - Charging damage in floating metal-insulator-metal capacitors

AU - Ackaert, Jan

AU - Wang, Zhichun

AU - De Backer, E.

AU - Coppens, P.

N1 - Conference code: 6

PY - 2002/8/7

Y1 - 2002/8/7

N2 - In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation

AB - In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation

KW - METIS-113958

KW - EWI-15624

KW - IR-67507

U2 - 10.1109/PPID.2001.929993

DO - 10.1109/PPID.2001.929993

M3 - Conference contribution

SN - 0-9651577-5-X

SP - 120

EP - 123

BT - 6th International Symposium on Plasma Process-Induced Damage 2001

PB - IEEE

CY - Piscataway, NJ

T2 - 6th International Symposium on Plasma Process-Induced Damage 2001

Y2 - 13 May 2001 through 15 May 2001

ER -

Charging damage in floating metal-insulator-metal capacitors

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Keywords

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