Charging damage in floating metal-insulator-metal capacitors

Jan Ackaert, Zhichun Wang, E. De Backer, P. Coppens

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    Abstract

    In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation
    Original languageEnglish
    Title of host publication6th International Symposium on Plasma Process-Induced Damage 2001
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages120-123
    Number of pages4
    ISBN (Print)0-9651577-5-X
    DOIs
    Publication statusPublished - 7 Aug 2002
    Event6th International Symposium on Plasma Process-Induced Damage 2001 - Monterey, United States
    Duration: 13 May 200115 May 2001
    Conference number: 6

    Conference

    Conference6th International Symposium on Plasma Process-Induced Damage 2001
    CountryUnited States
    CityMonterey
    Period13/05/0115/05/01

    Keywords

    • METIS-113958
    • EWI-15624
    • IR-67507

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  • Cite this

    Ackaert, J., Wang, Z., De Backer, E., & Coppens, P. (2002). Charging damage in floating metal-insulator-metal capacitors. In 6th International Symposium on Plasma Process-Induced Damage 2001 (pp. 120-123). Piscataway, NJ: IEEE. https://doi.org/10.1109/PPID.2001.929993