Charging induced damage on complex-antenna test structures

Zhichun Wang; Jan Ackaert; Cora Salm; F.G. Kuper

Charging induced damage on complex-antenna test structures

Zhichun Wang, Jan Ackaert, Cora Salm, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging. Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.

Original language	Undefined
Title of host publication	Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001
Place of Publication	Utrecht, The Netherlands
Publisher	STW
Pages	220-223
Number of pages	4
ISBN (Print)	90-73461-29-4
Publication status	Published - 2001
Event	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands Duration: 28 Nov 2001 → 30 Nov 2001

Publication series

Name
Publisher	STW Technology Foundation

Workshop

Workshop	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
Country	Netherlands
City	Veldhoven
Period	28/11/01 → 30/11/01

Keywords

METIS-200759
EWI-15639
charging-induced damage (CID)
metaloxide-semiconductor (MOS)
metal-insulator-metalcapacitor(MIMC)
antenna structure
IR-67786

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15639/01/wang_z.pdf

Cite this

@inproceedings{223d2c06e7e9411981510c9d8a25b6a9,

title = "Charging induced damage on complex-antenna test structures",

abstract = "In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging. Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.",

keywords = "METIS-200759, EWI-15639, charging-induced damage (CID), metaloxide-semiconductor (MOS), metal-insulator-metalcapacitor(MIMC), antenna structure, IR-67786",

author = "Zhichun Wang and Jan Ackaert and Cora Salm and F.G. Kuper",

year = "2001",

language = "Undefined",

isbn = "90-73461-29-4",

publisher = "STW",

pages = "220--223",

booktitle = "Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001",

note = "null ; Conference date: 28-11-2001 Through 30-11-2001",

}

Wang, Z, Ackaert, J, Salm, C & Kuper, FG 2001, Charging induced damage on complex-antenna test structures. in Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. STW, Utrecht, The Netherlands, pp. 220-223, 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, Veldhoven, Netherlands, 28/11/01. <http://eprints.eemcs.utwente.nl/secure2/15639/01/wang_z.pdf>

Charging induced damage on complex-antenna test structures. / Wang, Zhichun; Ackaert, Jan; Salm, Cora; Kuper, F.G.

Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001. Utrecht, The Netherlands : STW, 2001. p. 220-223.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Charging induced damage on complex-antenna test structures

AU - Wang, Zhichun

AU - Ackaert, Jan

AU - Salm, Cora

AU - Kuper, F.G.

PY - 2001

Y1 - 2001

N2 - In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging. Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.

AB - In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging. Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.

KW - METIS-200759

KW - EWI-15639

KW - charging-induced damage (CID)

KW - metaloxide-semiconductor (MOS)

KW - metal-insulator-metalcapacitor(MIMC)

KW - antenna structure

KW - IR-67786

M3 - Conference contribution

SN - 90-73461-29-4

SP - 220

EP - 223

BT - Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001

PB - STW

CY - Utrecht, The Netherlands

Y2 - 28 November 2001 through 30 November 2001

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