In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging.
Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.
|Publisher||STW Technology Foundation|
|Workshop||4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001|
|Period||28/11/01 → 30/11/01|
- charging-induced damage (CID)
- metaloxide-semiconductor (MOS)
- antenna structure