Charging induced damage on complex-antenna test structures

Zhichun Wang, Jan Ackaert, Cora Salm, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    In this paper, new complex-antenna charging test structures are designed with antennas connected to the gate, source and drain of MOS transistors, and antennas connected to both plates of the metal-insulator-metalcapacitor (MIMC) devices. The measurement results show that the transistor is free of charging when the antennas on the gate, source and drain have the same area. The failure fraction increases with the increasing of the differences in antenna size. A simple logarithm function describes very well the relation between the failure fraction of the MIMC and the ratio of the two antenna areas exposed to charging. Therefore, this logarithm function can be used to anticipate charging induced damage in MIMC devices with long interconnects.
    Original languageUndefined
    Title of host publicationProceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages220-223
    Number of pages4
    ISBN (Print)90-73461-29-4
    Publication statusPublished - 2001
    Event4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands
    Duration: 28 Nov 200130 Nov 2001

    Publication series

    Name
    PublisherSTW Technology Foundation

    Workshop

    Workshop4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
    CountryNetherlands
    CityVeldhoven
    Period28/11/0130/11/01

    Keywords

    • METIS-200759
    • EWI-15639
    • charging-induced damage (CID)
    • metaloxide-semiconductor (MOS)
    • metal-insulator-metalcapacitor(MIMC)
    • antenna structure
    • IR-67786

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